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PSMN1R6-40YLC,115-VB Product details

Product introduction:

The PSMN1R6-40YLC,115-VB is a Single N-MOSFET deeply optimized for low-voltage high-power switching scenarios. The SGT technology balances extremely low conduction losses with excellent switching characteristics. The LFPAK56 package achieves an excellent balance between heat dissipation capability and parasitic parameters. The combination of 40V voltage rating, 150A continuous current carrying capability, and 0.7mΩ ultra-low on-resistance makes it an ideal power switching option for high-current applications such as server power supplies, power tools, and automotive electronics, especially suitable for projects with extreme requirements on efficiency and power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 40V 3V 150A 0.7(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N MOS

VDS=40V: Suitable for 12V/24V/36V systems, providing ample voltage spike margin, effectively enhancing system avalanche capability.
VGS=±20V: Compatible with 5V~12V logic level drives, can be flexibly used with MCUs, gate driver ICs, or PMICs.
Vth=3V (typical): Moderate threshold voltage, strong anti-interference capability, while ensuring stable and reliable drive circuit operation under high current conditions.
RDS(on)=0.7mΩ @ VGS=10V: Extremely low on-resistance, negligible full-load conduction losses, significantly reducing heat dissipation requirements.
ID=150A: Strong continuous current capability, can confidently handle motor stall, surge currents, and high-power pulse loads.
Package LFPAK56: Low thermal resistance, low parasitic inductance, supports high-current high-frequency switching, while saving PCB area and improving assembly yield.

Domain and module applications:


Server and Communication Power Supplies: 0.7mΩ ultra-low resistance significantly improves synchronous rectification efficiency, reduces heatsink volume, aiding high-power-density design.
Power Tools and Garden Machinery: 150A high current carrying capacity matches high-load startup requirements; SGT process ensures reliability in hard-switching scenarios.
Battery Protection and BMS: Microsecond response and extremely low heat generation, suitable for charge/discharge protection and fast short-circuit interruption of large-capacity lithium battery packs.
Automotive Electronics and Vehicle Auxiliary Drives: 40V voltage rating combined with wide operating temperature range meets stringent surge and transient requirements of 12V/24V vehicle buses.
Low-Voltage High-Current DC-DC Converters: Replaces multiple parallel MOSFETs in architectures like PoL and VRM, simplifying circuits and reducing overall cost.
Motor Drives and Power Inverters: Combines low on-resistance and low switching losses, significantly reducing temperature rise in three-phase full-bridge drives, making the system more efficient.
High-Power LED Lighting Drives: Low voltage drop reduces constant current losses, supports high-current parallel schemes, improving overall luminaire efficacy and reliability.

Selection Summary: The PSMN1R6-40YLC,115-VB, with its core combination of 40V voltage rating, 150A current, and 0.7mΩ on-resistance, paired with the LFPAK56 package and SGT technology, achieves the best balance of efficiency, thermal management, and space utilization in high-current low-voltage switching scenarios. It is a high-performance single-device alternative to traditional TO-220 or DPAK multi-device parallel solutions, particularly suitable for cutting-edge designs requiring high power density and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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