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PSMN1R4-40YSHX-VB Product details
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Still troubled by conduction losses and heat dissipation issues in high-current low-voltage switching? Let VBsemi PSMN1R4-40YSHX-VB solve your worries! This N-MOSFET in an LFPAK56 package, using advanced SGT technology, features an on-resistance as low as 0.7mΩ (@10V), truly a "milliohm-level" current path. With a 40V voltage rating, 150A ultra-high current capability, and a compact LFPAK56 footprint, it provides ultimate efficiency and reliability for high-power-density power systems, making it the "power heart" for server power supplies, automotive electronics, and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
Voltage Rating: 40V (wide coverage for medium and low voltage applications, ample margin)
Drive Range: ±20V (compatible with various logic level drives, flexible adaptation)
Threshold Voltage: 3V (stable turn-on with standard logic levels)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (extremely low conduction losses, significantly reduced heat generation)
High Current Capability: 150A (single device handles ultra-high current, simplifying parallel design)
Package: LFPAK56 (low thermal resistance, strong heat dissipation, suitable for high-density high-current layout)
Technology: SGT (Shielded Gate Trench, fast switching speed, superior figure of merit)
Domain and module applications：
— Six High-Power Scenarios, One Device Handles All
Server and Communication Power Supplies: Synchronous rectification, OR-ing circuits, significant efficiency improvement, lower temperature rise
Battery Protection and Energy Storage Systems: Fast switching of high-current loops, protecting cells and system safety
BLDC Motor Drives: Power tools, drones, low-voltage servos, smooth drive with low losses
Automotive Electrical Systems: 48V/12V vehicle power supplies, DC-DC conversion, impact resistant, high reliability
Industrial Control Modules: High-power switches, UPS bypass, stable operation in harsh environments
High-Power LED Lighting: Constant current drive and dimming control, consistent brightness, no thermal runaway risk
PSMN1R4-40YSHX-VB — Ultra-low resistance, high current, making your power design effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
