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PSMN1R5-50YLHX-VB Product details
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Still troubled by severe heat generation and high conduction losses in high-current low-voltage switching? Let VBsemi PSMN1R5-50YLHX-VB break the deadlock! This N-MOSFET in an LFPAK56 package, using advanced SGT technology, features an on-resistance as low as 0.7mΩ (@10V) and a current carrying capacity of up to 150A, making high-power transmission effortless. The 40V voltage rating combined with ultra-low conduction losses makes it particularly suitable for demanding scenarios like high-density power supplies, motor drives, and automotive electronics, making it a "hardcore choice" for high-performance power designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
Voltage Rating: 40V (ample margin, more reassuring against transient surges)
Drive Range: ±20V (compatible with 5V/10V/12V drives, flexible adaptation)
Threshold Voltage: 3V (reliable turn-on with standard logic levels)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (extremely low conduction losses, significantly reduced heat generation)
High Current Capability: 150A (single device handles high power, easily manages heavy-load scenarios)
Package: LFPAK56 (low thermal resistance, strong heat dissipation, suitable for high-power-density layout)
Technology: SGT (Shielded Gate Trench process, superior switching performance and figure of merit)
Domain and module applications：
— Six High-Power Scenarios, One Device Handles All
Synchronous Rectification DC-DC: Ultra-low on-resistance helps converter efficiency exceed 98%
Motor Drives: Drones, power tools, robot joints, crisp and clean high-current drive
Battery Protection and BMS: Fast fault current interruption, ensuring safe and reliable energy storage systems
Automotive Low-Voltage Distribution: 40V voltage rating covers 12V/24V vehicle networks, strong surge immunity
Server Power Supplies: High-power-density design, reduces parallel device count, simplifies PCB layout
Power OR-ing Circuits: Low voltage drop, high current, provides ideal switching solution for redundant power systems
PSMN1R5-50YLHX-VB — Milliohm-level resistance, hundred-ampere current, making your power design a one-step solution!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
