中文
English
PSMN1R7-40YLBX-VB Product details
Back to previous pageProduct introduction：
The PSMN1R7-40YLBX-VB is a Single N-MOSFET deeply optimized for low-voltage, high-current power switching applications. Using advanced SGT (Shielded Gate Trench) technology, it achieves an excellent balance between extremely low on-resistance and switching speed. The LFPAK56 package combines excellent heat dissipation with a compact footprint, making it suitable for high-power-density applications. The combination of 40V drain-source voltage, 150A current rating, and 0.7mΩ on-resistance makes it an ideal power device for demanding fields like server power supplies, power tools, and automotive electrical systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
VDS=40V: Suitable for 12V/24V/36V systems, providing ample voltage spike margin, compatible with more bus architectures.
VGS=±20V: Wide gate drive voltage tolerance, compatible with 5V~12V logic levels, using 10V drive allows full utilization of device performance.
Vth=3V (typical): Moderate threshold voltage, strong anti-interference capability, prevents false turn-on, suitable for strong interference industrial environments.
RDS(on)=0.7mΩ @ VGS=10V: Extremely low on-resistance, minimal power loss at full load, significantly reduces device temperature rise, allowing for smaller heatsinks.
ID=150A: Extremely high continuous current capability, capable of handling heavy-load scenarios like high-power motors, battery switches, and synchronous rectification.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-current fast switching, saves PCB area, and enhances system power density.
Technology SGT: Shielded gate structure reduces Miller capacitance, significantly decreases switching losses, and improves body diode reverse recovery characteristics, enhancing reliability.
Domain and module applications：
High-Power DC-DC Converters: Replaces multiple paralleled MOSFETs in synchronous rectification applications. The 0.7mΩ on-resistance drastically reduces conduction losses, improving heavy-load efficiency by 2~4%, aiding module miniaturization.
Power Tools and Garden Machinery: 150A current margin meets stall and impact load demands. SGT process reduces PWM speed control losses, extending battery life.
Automotive Electrical Systems: 40V drain-source voltage adapts to 12V/24V vehicle buses. Low resistance reduces heat generation in wiring and connectors, suitable for main power switches, electronic fuses, and motor drives.
Battery Protection Boards and BMS: Extremely low on-resistance results in minimal temperature rise on the protection board, supporting high-rate charge/discharge. SGT technology ensures fast shutdown during overcurrent/short circuit.
Server and Telecom Power Supplies: Core device for high-efficiency synchronous rectification solutions. LFPAK56 package facilitates airflow cooling, meeting the requirements of high-density power modules.
Low-Voltage, High-Current Motor Drives: 150A continuous current covers power scenarios for drones, robots, electric bicycles, etc. Low switching losses improve inverter efficiency.
Load Switches and Power Distribution Protection: Can replace traditional relays, enabling arc-free switching. Low conduction voltage drop reduces system voltage drop, improving downstream power supply stability.
Selection Summary: The PSMN1R7-40YLBX-VB, with its 0.7mΩ ultra-low on-resistance, 150A high current capability, and switching advantages of SGT technology, sets a performance benchmark in the field of low-voltage, high-current power conversion and control. Whether for power modules pursuing high efficiency or automotive and high-reliability applications in harsh environments, this device provides ample power margin and thermal headroom, making it a preferred MOSFET for high-power-density designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
