中文
English
PSMN2R2-40YSBX-VB Product details
Back to previous pageProduct introduction：
Struggling with insufficient efficiency and severe heat generation in high-current, low-voltage conversion? Let VBsemi PSMN2R2-40YSBX-VB help! This N-MOSFET in an LFPAK56 package, using advanced SGT technology, achieves an ultra-low on-resistance of only 0.7mΩ, acting as a 'milliohm-level' current path. With a 150A high current capability and 40V drain-source voltage, it easily handles high-power-density power supply designs, maximizing advantages in both switching and conduction losses. It is a 'performance beast' for server power supplies, power tools, and automotive electronics.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
Drain-Source Voltage: 40V (ample margin for low-voltage, high-current scenarios)
Gate Drive Range: ±20V (compatible with various gate drive voltages)
Threshold Voltage: 3V (clear threshold for more reliable switching control)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (extremely low conduction loss, negligible heat generation)
High Current Capability: 150A (ultra-high current handling, suitable for heavy-load applications)
Package: LFPAK56 (low thermal resistance, strong heat dissipation, suitable for high-density power boards)
Technology: SGT (Shielded Gate Trench process, low switching loss, excellent figure of merit)
Domain and module applications：
— Six Core Scenarios, One Solution
Synchronous Rectification: LLC secondary rectification in server/telecom power supplies, efficiency soaring above 95%+
Motor Drive: Power tools, drone ESCs, stable high-current output without overheating
Battery Protection: Energy storage systems, power battery packs, fast fault current interruption, safe and reliable
DC-DC Conversion: Automotive DC-DC, module power supplies, handles low-voltage, high-current output with ease
EV Main Drive Assist: UPS, automotive electrical systems, impact resistant, high temperature tolerant, durable and stable
High-Performance Power Switch: High-frequency switching circuits, load switches, low ringing, low loss, fast response
PSMN2R2-40YSBX-VB — Ultra-low resistance, ultra-high current, injecting surging power into your power designs!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
