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PSMN2R5-40YLBX-VB Product details
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The PSMN2R5-40YLBX-VB is a Single N-MOSFET deeply optimized for low-voltage, high-power switching applications. Using advanced SGT (Shielded Gate Trench) technology, it achieves an excellent balance between ultra-low on-resistance and fast switching characteristics. The LFPAK56 package offers outstanding heat dissipation and low parasitic inductance, making it suitable for high-density current and high-reliability applications. The combination of 40V drain-source voltage, 150A current rating, and 0.7mΩ on-resistance makes it a preferred power switching device for medium-to-high-power systems like server power supplies, power tools, and automotive electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
VDS=40V: Suitable for 12V/24V/36V systems, providing ample voltage spike margin and enhancing system avalanche capability.
VGS=±20V: Compatible with a wide range of gate drive levels, flexible for use with standard drivers or MCU interfaces.
Vth=3V (typical): Moderate threshold voltage, strong anti-interference capability, ensuring full conduction under high current.
RDS(on)=0.7mΩ @ VGS=10V: Extremely low on-resistance, significantly reducing conduction losses and temperature rise, improving overall system efficiency.
ID=150A: Strong continuous current capability, easily handling high-impact load scenarios like motor startup and battery short-circuit protection.
Package LFPAK56: Low thermal resistance, low parasitic parameters, supports high-current, high-frequency switching while saving PCB area and enhancing heat dissipation reliability.
Domain and module applications：
Power Tools and Garden Machinery: Ultra-low resistance supports high-power brushless motor drives, low PWM switching losses, extending overall battery life.
Automotive Electronics and On-Board Power Supplies: 40V drain-source voltage covers 12V/24V vehicle buses, combined with SGT fast switching, suitable for DC-DC, motor control, and battery management.
Server and Telecom Power Supplies: Can significantly replace Schottky diodes in synchronous rectification applications, notably improving heavy-load efficiency, facilitating power module miniaturization.
Battery Protection and BMS: 150A high current margin meets overcurrent protection needs of energy storage and power battery packs, low heat generation ensures long-term stable operation.
Low-Voltage, High-Current DC-DC Converters: 0.7mΩ on-resistance results in minimal voltage drop at full load, suitable for multi-phase buck, boost, and power conversion circuits.
Motor Drives and Industrial Control: High surge capability and excellent thermal performance adapt to frequent start-stop and overload conditions, reducing controller thermal design pressure.
Electric Forklifts and Low-Speed EVs: High-current switching capability combined with LFPAK56 package provides an efficient, low-loss solution for the power path.
Selection Summary: The PSMN2R5-40YLBX-VB, with its core advantages of 40V drain-source voltage, 150A high current, and 0.7mΩ ultra-low on-resistance, combined with SGT technology and LFPAK56 package, is highly competitive in systems with stringent requirements for high power density, low loss, and high reliability. It is an advanced choice to replace traditional DPAK/D2PAK high-current devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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