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PSMN1R0-40YLDX-VB Product details

Product introduction:

The PSMN1R0-40YLDX-VB is a Single N-MOSFET deeply optimized for low-voltage, high-current power switching applications. Using SGT (Shielded Gate Trench) technology, it balances ultra-low conduction losses with excellent switching characteristics. The LFPAK56 package achieves an outstanding balance between thermal performance and board space. The combination of 40V voltage rating, 150A current capability, and 0.7mΩ on-resistance makes it an ideal core component for high power density applications such as server power supplies, power tools, and automotive load switches, particularly suitable for designs requiring minimal temperature rise within a very small package.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 40V 3V 150A 0.7(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N MOS

VDS=40V: Suitable for 12V/24V/36V systems, providing ample margin for load transient voltage spikes, enhancing system robustness.
VGS=±20V: Compatible with 4.5V~12V logic level drives, can be directly controlled by PWM controllers, MCUs, or dedicated gate drivers, simplifying peripheral design.
Vth=3V (typical): Moderate threshold voltage for strong noise immunity, ensuring full conduction with 10V drive, suitable for industrial PWM applications.
RDS(on)=0.7mΩ @ VGS=10V: Extremely low on-resistance, making full-load conduction losses nearly negligible, significantly reducing power loop temperature rise, allowing for fewer paralleled devices and smaller heatsinks.
ID=150A: Ample continuous current capability to handle high transient current scenarios like motor stall and battery short-circuit protection, ensuring long-term reliable operation.
Package LFPAK56: Low parasitic inductance, low thermal resistance, supports high-frequency switching, optimized pad area for high-current PCB layout, enhancing system power density.

Domain and module applications:


DC-DC Converters and Synchronous Rectification: The 0.7mΩ ultra-low on-resistance significantly reduces rectification losses, improving heavy-load efficiency by 2-4%, especially suitable for 40V input buck/boost modules.
Server and Telecom Power Supplies: High current and low thermal resistance meet the stringent requirements of Point-of-Load (POL) power supplies in 48V/12V architectures, aiding high power density power module design.
Power Tools and Garden Machinery: 150A current margin covers start-up/stall surges, SGT technology provides low switching losses, extending battery runtime per charge.
Battery Protection and BMS: Microsecond shutdown capability combined with low internal resistance reduces protection board heating, suitable for high-rate discharge battery packs in power tools and energy storage systems.
Low-Voltage Motor Drives: Low PWM switching losses lead to smoother motor operation and significantly reduced controller temperature rise, suitable for brushless DC motor drivers below 36V.
Automotive Load Switches and Distribution Boxes: 40V voltage rating adapts to 12V/24V vehicle buses, AEC-friendly package design meets automotive electronics' high reliability and high current requirements.
UPS and Inverter Backup Circuits: Can serve as a battery switching switch in the low-voltage high-current path, extremely low voltage drop improves system efficiency, reducing internal heat dissipation pressure.

Selection Summary: The PSMN1R0-40YLDX-VB achieves an ultimate balance between ultra-low on-resistance, high current carrying capability, and compact packaging. It is a high-performance general-purpose choice for 40V low-voltage, high-current switching applications, especially suitable for industrial-grade and automotive-grade projects with strict requirements on heat dissipation, power density, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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