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SQJ154EP-VB Product details

Product introduction:

The SQJ154EP-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching applications. It utilizes SGT (Split Gate Trench) technology to achieve an excellent balance between ultra-low on-resistance and switching speed. The LFPAK56 package combines low parasitic inductance with excellent heat dissipation, capable of handling high-density, high-current applications. The ultimate combination of 40V withstand voltage, 150A continuous current, and 0.7mΩ on-resistance makes it a benchmark choice in fields like low-voltage power paths, motor drives, and synchronous rectification, especially suitable for replacing traditional multi-parallel solutions using DPAK / D2PAK packages.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 40V 3V 150A 0.7(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N MOS

VDS=40V: Suitable for 5V/12V/24V systems, providing ample safety margin for load dump and switching spikes, enhancing system surge immunity.
VGS=±20V: Compatible with 3.3V~12V logic level drives, can be directly connected to MCU/PMIC/PWM controllers, simplifying gate drive design.
Vth=3V (Typical): Moderate threshold voltage offers good immunity against false turn-on while meeting the full conduction requirements of low-voltage drive scenarios.
RDS(on)=0.7mΩ @ VGS=10V: Extremely low on-resistance, drastically reducing conduction losses and temperature rise. The advantage is significant in high-current scenarios above 100A, allowing for smaller heatsinks or reduced copper area.
ID=150A: Extremely strong continuous current carrying capability, confidently handling transient high currents from high-power motor surges and power supply hot-swap events.
Package LFPAK56: Dual-sided cooling design, low thermal resistance, low parasitic inductance, supports high-frequency switching while saving PCB area, suitable for high-power-density layouts.
Technology SGT: Shielded gate structure reduces Miller capacitance, resulting in lower switching losses and optimized EMI performance, contributing to high-efficiency, high-reliability power systems.

Domain and module applications:



High-Power DC-DC Converters: Can replace multiple low-voltage MOSFETs in synchronous rectification applications, achieving high efficiency and high current output with a single device, significantly simplifying the circuit and reducing module size.

12V/24V Motor Drives: Extremely low on-resistance reduces voltage drop in the winding path, ensuring high torque output while reducing controller heat generation, suitable for power tools, robotics, etc.

Battery Protection & BMS Systems: 150A high current capability meets the charge/discharge needs of power battery packs. Milliohm-level internal resistance reduces self-consumption and temperature rise of the protection board, extending system lifespan.

Server Power Supply Modules: 40V withstand voltage and SGT low switching losses match high-frequency synchronous rectification architectures, improving energy efficiency levels and adapting to high-power-density rack-mount power supply needs.

Electric Vehicle Low-Voltage Circuits: Suitable for DC-DC auxiliary power supplies, charging port protection, and main circuit pre-charge switches. Voltage margin and thermal performance meet the harsh environment of vehicle buses.

Load Switches & Hot-Swap: 0.7mΩ on-resistance results in extremely low voltage drop in high-current power supply paths, supporting safe hot-swap, suitable for telecom base stations, industrial control equipment, etc.

Selection Summary: The SQJ154EP-VB, with its core advantages of ultra-low on-resistance, high continuous current, and compact LFPAK56 package, is a flagship choice for 40V low-voltage, high-power switching applications, particularly suitable for engineers with extreme demands on efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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