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SiJA54ADP-VB Product details

Product introduction:

The SiJA54ADP-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching applications. It utilizes advanced SGT (Split Gate Trench) technology to achieve an excellent balance between ultra-low on-resistance and switching speed. The LFPAK56 package offers excellent heat dissipation and extremely low parasitic inductance, suitable for high-power-density designs. The ultimate combination of 40V withstand voltage, 150A continuous current capability, and 0.7mΩ on-resistance makes it an ideal choice for high-current applications such as server power supplies, power tools, and automotive electrical systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 40V 3V 150A 0.7(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N MOS

VDS=40V: Suitable for 12V/24V/36V systems, providing ample margin for switching voltage spikes, significantly reducing avalanche breakdown risk, and enhancing system reliability.
VGS=±20V: Wide gate drive window, compatible with 10V standard drive and various PWM controllers, supports direct connection to driver outputs, simplifying peripheral design.
Vth=3V (Typical): Ensures full conduction under strong drive, achieving extremely low on-resistance with 10V gate voltage, suitable for high-current, high-frequency operation.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, minimal full-load conduction losses, significantly reducing temperature rise, minimizing or eliminating large heatsinks, and improving system efficiency.
ID=150A: Extremely ample continuous current capability, capable of withstanding severe surge loads and peak currents, suitable for heavy-load applications like high-power motors and battery switches.
Package LFPAK56: Compact size with low thermal resistance, features Kelvin source connection design to effectively reduce parasitic inductance, supports high-frequency switching while saving PCB area.

Domain and module applications:


High-Power DC-DC Converters: Ultra-low on-resistance significantly improves synchronous rectification efficiency, showing notable efficiency gains over traditional MOSFETs under heavy load, beneficial for increasing module power density.
Power Tools & Garden Machinery: 150A high current margin comfortably handles stall and startup surges. Low thermal resistance package ensures stable operation during prolonged heavy loads.
Battery Protection & BMS: Microsecond switching response combined with low conduction voltage drop efficiently achieves overcurrent/short-circuit protection, reducing self-heating of the protection board and extending battery life.
Automotive Low-Voltage Electrical Systems: 40V withstand voltage covers 12V/24V vehicle bus transient requirements. SGT technology offers strong avalanche ruggedness, suitable for loads like engine cooling fans and PTC heaters.
Server & Telecom Power Supplies: Replaces multi-parallel solutions in low-voltage, high-current rectification scenarios, reducing component count, improving power density and system reliability.
Motor Drivers: Low PWM switching losses, high current carrying capacity, resulting in smoother motor operation and significantly lower controller temperature rise.
Selection Summary: The SiJA54ADP-VB, with its 40V withstand voltage, 150A high current, 0.7mΩ ultra-low on-resistance, and advanced LFPAK56 package, provides a benchmark solution for low-voltage, high-current switching applications, particularly suitable for projects with extreme demands on efficiency, thermal management, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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