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NVMYS1D6N04CLT1G-VB Product details
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The NVMYS1D6N04CLT1G-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching applications. Using advanced SGT (Shielded Gate Trench) technology, it achieves an excellent balance between extremely low on-resistance and switching speed. The LFPAK56 package offers superior heat dissipation and low parasitic parameters, making it suitable for high-density power modules. The combination of 40V withstand voltage, 150A continuous current, and 0.7mΩ ultra-low on-resistance makes it a high-performance preferred device for heavy-duty applications such as server power supplies, automotive electrical systems, and industrial power converters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
- VDS=40V: Covers 12V/24V/36V systems, providing ample voltage spike margin, enhancing avalanche ruggedness and system reliability.
- VGS=±20V: Wide gate drive window, compatible with standard 10V drive and various PWM controllers, strong resistance to gate voltage overshoot.
- Vth=3V (Typical): Moderate threshold voltage, allows full conduction with 10V drive, effectively preventing false turn-on and enhancing noise immunity.
- RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces conduction losses compared to traditional MOSFETs, markedly improves temperature rise under heavy load conditions, effectively simplifying thermal design.
- ID=150A: Large continuous current margin, confidently handles peak surges such as motor stall, power supply hot-swap, and battery circuit inrush.
- Package LFPAK56: Low gate-source parasitic inductance supports high-frequency switching; bottom-side thermal pad enhances heat transfer, balancing power density and reliability.
- Technology SGT: Shielded gate structure reduces Miller charge, resulting in lower switching losses, while optimizing the body diode reverse recovery characteristics, suitable for bridge circuits.
Domain and module applications：
- Server and Communication Power Supplies: Ultra-low on-resistance reduces rectification losses in DC-DC converters, improving overall efficiency and meeting high power density requirements.
- Automotive Electrical Systems: 40V withstand voltage covers 12V/24V vehicle bus transients, 150A current capacity suitable for main relays, electronic fuses, and motor drives.
- Power Tools and Low-Voltage Motor Drives: SGT technology brings low switching losses, smoother PWM high-speed operation, significantly extending battery life.
- Battery Protection and BMS: Micro-ohm level on-resistance reduces self-heating of the protection board, large current capacity adapts to high-rate charge/discharge, extending system life.
- Power OR-ing and Load Switches: Extremely low voltage drop reduces conduction losses, LFPAK56 package facilitates multi-device paralleling, meeting high-current hot-swap applications.
- Industrial Variable Frequency Drives and Inverters: Low EMI and strong avalanche ruggedness enhance system reliability, suitable for 48V and below industrial control buses.
- Consumer Electronics High-Power Fast Charging: Replaces Schottky diodes in synchronous rectification, significantly improves heavy-load efficiency, aiding in the design of compact, high-power adapters.
Selection Summary: The NVMYS1D6N04CLT1G-VB, with its 40V withstand voltage, 0.7mΩ ultra-low on-resistance, and 150A ultra-high current capability, combined with SGT technology and LFPAK56 package, provides a high-performance, high-reliability, and cost-effective solution for low-voltage, high-power switching applications, especially suitable for power, automotive, and industrial applications with stringent requirements on efficiency, thermal dissipation, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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