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PSMNR70-40YSN-VB Product details

Product introduction:

The PSMNR70-40YSN-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching applications. Using advanced SGT technology, it combines extremely low conduction losses with excellent switching characteristics. The LFPAK56 package achieves an ideal balance between heat dissipation and board space. The combination of 40V withstand voltage, 150A continuous current, and 0.7mΩ ultra-low on-resistance makes it a preferred alternative to traditional DPAK or D2PAK devices in server power supplies, power tools, and automotive electrical systems, especially suitable for designs requiring high power density and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 40V 3V 150A 0.7(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N MOS

VDS=40V: Suitable for 12V/24V/36V systems, providing ample voltage spike margin, reducing avalanche breakdown risk, enhancing system robustness.
VGS=±20V: Compatible with 3.3V~12V logic levels, can be directly connected to MCU/PMIC or driver ICs, simplifying gate drive circuit design.
Vth=3V (Typical): Moderate threshold voltage, effectively suppresses dv/dt crosstalk, strong anti-false turn-on capability, suitable for bridge and synchronous rectification topologies.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, extremely low conduction losses under full load, significantly reducing device temperature rise, allowing for smaller heatsinks.
ID=150A: Strong continuous current capability, confidently handles transient high current surges like motor stall and battery short circuit, providing ample margin.
Package LFPAK56: Low parasitic inductance and low thermal resistance design, supports high-frequency switching, saves PCB area, increases power density.

Domain and module applications:


Server and Communication Power Supplies: Replaces Schottky diodes/multiple paralleled MOSFETs in synchronous rectification and OR-ing circuits, significantly improves heavy-load efficiency, ultra-low resistance reduces copper losses, aiding power module miniaturization.
Power Tools and Garden Machinery: High current capacity matches motor transient peaks, low heat generation ensures long-duration full-load operation, significantly lower controller temperature rise.
Low-Voltage BLDC/PMSM Motor Drives: SGT technology optimizes switching losses, more efficient PWM modulation, smoother motor operation, further reduced inverter size.
Automotive Power Supplies and Battery Management: 40V withstand voltage suitable for 12V/24V vehicle bus, fast switching and low resistance reduce self-heating of protection boards, suitable for lithium battery charge/discharge management and electronic fuses.
Power DC-DC Converters: As the main power switch in synchronous buck/boost converters, the 0.7mΩ on-resistance can improve full-load efficiency by over 3%, especially suitable for high-current output modules.
High-Power LED Drives and Industrial Control: Low conduction voltage drop reduces constant current source power dissipation, supports multi-device paralleling, meeting industrial-grade wide temperature and long life requirements.
Adapters and Fast Charging Power Supplies: The LFPAK56 package balances heat dissipation and layout, ultra-low losses improve power conversion efficiency, meeting the design needs of compact, high-power adapters.

Selection Summary: The PSMNR70-40YSN-VB achieves a high-performance balance between ultra-low on-resistance, high current capacity, and package thermal performance. It is a high-end general-purpose choice for 40V low-voltage, high-power switching applications, especially suitable for projects with strict requirements on efficiency, power density, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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