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PSMN1R9-40YSD-VB Product details

Product introduction:

The PSMN1R9-40YSD-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching applications. Using advanced SGT (Split Gate Trench) technology, it achieves an excellent balance between extremely low on-resistance and switching speed. The LFPAK56 package offers excellent heat dissipation and low parasitic inductance, suitable for high-density power systems. The combination of 40V withstand voltage, 150A continuous current, and 0.7mΩ on-resistance makes it a core power device in server power supplies, automotive electrical systems, and industrial power converters, particularly suitable for high-power applications with stringent efficiency and thermal management requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 40V 3V 150A 0.7(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N MOS

VDS=40V: Suitable for 12V/24V/36V systems, providing ample voltage margin for motor stall, load transients, and switching spikes, significantly reducing the risk of avalanche breakdown.
VGS=±20V: Compatible with 5V~12V logic level drives, can be directly connected to PWM controllers, MCU/PMIC, simplifying gate drive design.
Vth=3V (Typical): Moderate threshold voltage, strong noise immunity, while ensuring full conduction under 10V drive, suitable for industrial-grade PWM drive scenarios.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, extremely low conduction losses under high current full load conditions, significantly reducing device temperature rise, minimizing the need for paralleling and heatsink volume.
ID=150A: Outstanding continuous current capability, can handle transient surges of high-power loads, suitable for demanding applications like high-current switches, battery disconnects, and motor drives.
Package LFPAK56: Industry standard power package, large bottom-side thermal pad effectively reduces thermal resistance, while low parasitic inductance supports high-frequency switching, enhancing system reliability.
Technology SGT: Split gate structure optimizes charge balance, significantly reducing FOM (on-resistance × gate charge), balancing low voltage drop and fast switching, aiding high-frequency, high-efficiency design.

Domain and module applications:


Server/Communication Power Supplies: 0.7mΩ ultra-low resistance significantly improves synchronous rectification and full-bridge conversion efficiency, reduces DC-DC module heating, supporting high power density design.
Power Tools and Low-Voltage Motor Drives: 150A high current margin handles stall and startup surges, low PWM switching losses, smoother motor control, significantly lower controller temperature rise.
Automotive Electrical Systems (12V/24V Bus): 40V withstand voltage combined with 150A current capacity, suitable for main relay replacement, electronic fuses, and battery management switches, offering high reliability.
Lithium Battery Protection Boards and BMS: Extremely low on-resistance reduces self-heating of the protection board, high current supports high-rate charge/discharge, fast switching characteristics ensure reliable shutdown during overcurrent/short circuit.
Power OR-ing and Load Switching: Acts as an ideal diode MOSFET in redundant power systems, with extremely low forward voltage drop, reducing losses by an order of magnitude compared to Schottky diodes.
High-Performance DC-DC Converters: In synchronous rectification low-side applications, heavy-load efficiency can be improved by 2~3%, and the LFPAK56 package facilitates module miniaturization and automated assembly.
Industrial Power Supplies and Welding Equipment: Strong ability to withstand high current surges, good thermal stability, suitable for low-voltage, high-current output applications like electroplating power supplies and induction heating.

Selection Summary: The PSMN1R9-40YSD-VB achieves 0.7mΩ ultra-low on-resistance and 150A ultra-high current capability at the 40V voltage level. Combined with SGT technology and LFPAK56 package, it is a high-performance flagship choice for low-voltage, high-current power switching applications, especially suitable for projects with extreme requirements on efficiency, thermal dissipation, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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