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PSMN1R7-40YLB-VB Product details
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Are you designing a high-power-density power module but facing a thermal bottleneck? Ordinary MOSFETs run too hot under high current, and larger packages consume precious space. The VBsemi PSMN1R7-40YLB-VB is designed for this exact challenge—it perfectly integrates 40V withstand voltage, 150A current capability, and an ultra-low on-resistance of only 0.7mΩ into the LFPAK56 package, allowing you to achieve both high power conversion efficiency and a compact layout without compromising performance.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
- Voltage Rating 40V, covering low-voltage, high-current application scenarios
- Gate Drive Range ±20V, compatible with various drive voltages
- Threshold Voltage 3V, clear and stable switching characteristics
- On-Resistance 0.7mΩ (at 10V drive), extremely low losses, significantly reducing thermal stress
- Maximum Current 150A, achieving ultra-high current carrying capability in a small package
**
Domain and module applications：
- **Synchronous Rectification DC-DC Modules** – Ultra-low on-resistance significantly reduces rectification losses, providing strong support for efficiencies above 98%.
- **Power Tools / Motor Drives** – 150A high current capability easily handles stall and peak loads, combined with SGT technology for fast switching, improving dynamic response.
- **Battery Protection Boards / BMS** – Milliohm-level internal resistance reduces system voltage drop, while precisely cutting off the circuit during high-current overcharge/discharge to protect battery safety.
- **Server / Telecom Power Supplies** – Acts as the main switch in compact on-board power supplies, improving overall power density with extremely low losses.
- **Automotive Electronics / On-Board DC-DC** – Withstands 40V voltage fluctuations, providing stable and efficient power conversion for vehicle systems.
- **Power ORing / Load Switches** – Low conduction voltage drop, suitable for intelligent on/off management of high-current paths.
**One-sentence summary: The PSMN1R7-40YLB-VB is not an ordinary MOSFET; it is your 'ultra-low-impedance powerhouse' balancing efficiency, space, and reliability in low-voltage, high-power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
