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PSMN1R5-50YLH-VB Product details

Product introduction:

The PSMN1R5-50YLH-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching applications. Utilizing advanced SGT technology, it combines extremely low on-resistance with excellent switching characteristics. The LFPAK56 package achieves an ideal balance between heat dissipation capability and footprint area. The combination of 40V withstand voltage, 150A current capability, and 0.7mΩ on-resistance makes it a preferred device for applications such as server power supplies, automotive electrical systems, and high-power-density DC-DC converters, especially in scenarios with stringent requirements for efficiency and thermal performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 40V 3V 150A 0.7(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N MOS

VDS=40V: Suitable for 12V/24V/36V systems, providing ample voltage margin for spikes, reducing avalanche breakdown risk, and improving system reliability.
VGS=±20V: Compatible with a wide range of gate drive voltages, allowing flexible integration with PWM controllers, drivers, and logic-level circuits.
Vth=3V (typical): Moderate threshold voltage balances noise immunity and drive compatibility, suitable for industrial control scenarios.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance dramatically reduces conduction losses, significantly lowering full-load temperature rise, enabling smaller heatsinks or copper areas.
ID=150A: Robust continuous current capability, meeting high-power loads and high surge current scenarios with ample margin.
Package LFPAK56: Low parasitic inductance, excellent thermal resistance characteristics, supports high-frequency switching, saves PCB space, facilitating compact design.
Technology SGT: Shielded gate trench structure, optimizes charge balance, reduces switching losses, improves EMI immunity.

Domain and module applications:


High-Power DC-DC Converters: Replaces traditional MOSFETs in synchronous rectification applications, significantly improving heavy-load efficiency, aiding module miniaturization and efficiency enhancement.
Server and Telecom Power Supplies: In low-voltage, high-current bus conversion scenarios, the 0.7mΩ on-resistance significantly reduces power losses, improving overall system energy efficiency.
Automotive Electrical Systems: 40V withstand voltage covers 12V/24V vehicle buses, suitable for high-current loads like electric power steering, PTC heaters, and on-board DC-DC chargers.
Motor Drive Control: Extremely low on-resistance and low switching losses make PWM control more efficient, resulting in smoother motor operation and significantly lower controller temperature rise.
Battery Protection and BMS: High current carrying capability and fast switching response ensure reliable shutdown during overcurrent/short circuit, while reducing self-heating of the protection board.
Power Tools and Garden Machinery: Suitable for high-discharge-rate battery packs, providing continuous high current output, extending tool runtime and service life.
Low-Voltage High-Current Switching Power Supplies: Replaces multi-tube parallel solutions, achieving high-current paths with a single device, simplifying circuit design and reducing costs.

Selection Summary: With its core advantages of 40V withstand voltage, 150A high current, 0.7mΩ ultra-low on-resistance, and advanced SGT process, the PSMN1R5-50YLH-VB achieves an excellent balance between power density, thermal management, and system efficiency. It is a high-performance preferred solution for low-voltage, high-current switching applications, particularly suitable for projects with strict requirements for current carrying capacity and temperature rise control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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