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2N7002DWH6327XTSA1-VB Product details
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The VBsemi 2N7002DWH6327XTSA1-VB is a dual N+N channel field-effect transistor belonging to the VBsemi brand product series. This product is manufactured using advanced Trench technology, offering high reliability and stable switching performance, suitable for various low-voltage, low-signal control and power management circuits. It features a compact SC70-6 package with the advantage of dual-channel integration, helping to save PCB area and simplify circuit design, making it suitable for high-density mounting in portable and miniaturized electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+N | 60V | 1.7V | 0.3A | 3200(mΩ) | 2500(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+N | MOS |
- Configuration: Dual N+N Channel
- Drain-Source Voltage (VDS): 60V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.7V
- On-Resistance (VGS=4.5V): 3200mΩ
- On-Resistance (VGS=10V): 2500mΩ
- Maximum Drain Current (ID): 0.3A
- Package: SC70-6
- Technology: Trench
Domain and module applications：
1. Portable Device Power Management: The 2N7002DWH6327XTSA1-VB is suitable for load switches and power path management in portable devices such as power banks, smart bands, and Bluetooth earphones. Its low threshold voltage and dual-channel design simplify battery-powered circuits.
2. Signal Switching and Level Shifting: In I/O interfaces, sensor signal switching, or logic level shifting circuits, this device can function as an analog or digital switch for efficient transmission of low-voltage control signals.
3. Battery Protection Modules: In lithium battery protection boards, it can be used as a switching element for the charge/discharge path, working with a control IC to provide overcharge, over-discharge, and overcurrent protection, ensuring safe battery pack operation.
4. Low-Power DC-DC Converters: Suitable for synchronous rectification auxiliary circuits in low-voltage buck or boost converters, reducing switching losses and improving conversion efficiency.
5. Consumer Electronics Control Modules: In applications like smart sockets, USB switches, e-cigarettes, and LED indicator control, it can be used for switching control and power distribution, meeting the direct drive requirements of microcontrollers.
6. LED Lighting Drive: Can be used for constant current switching control of low-voltage LED strips or indicators, enabling precise on/off switching and dimming functions.
7. Industrial Sensor Interfaces: In the sensor output interfaces of industrial automation equipment, this dual-channel MOSFET can be used for signal conditioning and isolation control, enhancing circuit noise immunity.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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