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IQE013N04LM6ATMA1-VB Product details
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** Are you designing a high-power-density power module with extremely limited board space, yet needing to handle a continuous current output of up to 60A? Traditional MOSFETs are either too large in package or have unacceptably high conduction losses. The VBsemi IQE013N04LM6ATMA1-VB is the solution born for this challenge—it integrates a 40V voltage rating, 60A current capability, and an ultra-low on-resistance of just 2mΩ into the compact DFN8(3X3) package, allowing high-current designs to no longer compromise on space and heat dissipation.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 40V | 3V | 60A | 3(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 40V | 3V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 40V | 3V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | MOS |
- Voltage Rating 40V, suitable for typical 24V and below systems, providing ample safety margin
- Gate Drive Range ±20V, compatible with various drive voltages, flexible to use
- Threshold Voltage 3V, clear turn-on logic, strong noise immunity
- On-Resistance 2mΩ (at 10V drive), 3mΩ (at 4.5V drive), negligible losses
- Maximum Current 60A, unleashing high power in a small package
- Utilizes Trench technology, excellent figure of merit, balancing switching and conduction performance
**
Domain and module applications：
- **Power Tools / Lithium Battery Brushless Motor Drives** – Acts as the core power switch in motor drive bridges. The 2mΩ ultra-low resistance significantly reduces temperature rise, supports high power output, and extends tool runtime.
- **Automotive Electronics / Body Control Modules** – Withstands 40V voltage fluctuations, providing reliable and efficient power switching for loads like lights, wipers, and window motors.
- **Server Power Supplies / High-Frequency DC-DC Modules** – Replaces traditional Schottky diodes in synchronous rectification or point-of-load power supply topologies, improving conversion efficiency and reducing thermal stress.
- **Battery Protection Boards / Energy Storage Systems** – Can quickly disconnect the main circuit upon overcurrent or short circuit detection; 60A high current capability suits high-capacity battery pack requirements.
- **Drone / Robot Power Systems** – The thin DFN8(3X3) package combined with low on-resistance provides an ideal choice for high-power-density electronic speed controller designs.
- **Electric Two-Wheeler / Balance Vehicle Controllers** – Achieves low-heat, high-efficiency power conversion in square wave or FOC drives, enhancing the riding experience.
**One Sentence Summary:** The IQE013N04LM6ATMA1-VB is not just an ordinary MOSFET; it is your 'low-resistance king' and 'space efficiency master' for high-current, high-density power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
