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2N7002CKVL-VB Product details
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The VBsemi 2N7002CKVL-VB is a Single N-channel MOSFET belonging to the VBsemi brand product series. This product features stable switching performance and good reliability, making it suitable for various low-voltage, low-current control and regulation applications. Manufactured using Trench technology, it has a drain-source voltage (VDS) of 60V and operates safely within a gate-source voltage (VGS) range of ±20V. The product is packaged in SOT23-3, making it ideal for circuit scenarios with limited space requiring efficient and compact designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | MOS |
- Drain-Source Voltage (VDS): 60V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.7V
- On-Resistance (VGS=4.5V): 3100 mΩ
- On-Resistance (VGS=10V): 2800 mΩ
- Maximum Drain Current (ID): 0.3A
- Technology: Trench
Domain and module applications：
1. Small-Signal Switching Circuits: The 2N7002CKVL-VB is suitable for small-signal switching applications driven by logic levels, such as controlling load on/off under microcontroller I/O control, widely used in development boards, sensor interfaces, and control signal switching circuits.
2. Level Shifting Modules: In mixed-voltage systems, this device can serve as a level-shifting switch for bidirectional or unidirectional conversion between 3.3V and 5V logic levels, ensuring signal transmission compatibility and stability.
3. Power Management Auxiliary Circuits: Suitable for auxiliary power control in portable devices, such as standby power management, load switches, and low-power on/off control in battery-powered devices, helping to reduce system static losses.
4. LED Drive and Indicator Circuits: In low-voltage LED drive or status indicator circuits, this MOSFET can be used for constant current or switching control, enabling brightness adjustment and on/off control for lighting loads like LED strips and indicator lights.
5. Protection and Detection Circuits: In battery protection boards, overcurrent protection circuits, and power monitoring modules, it can serve as a detection switch or protection bypass component, supporting precise control of low-current signals and enhancing system safety.
6. DC-DC Converter Auxiliary Circuits: In low-voltage DC-DC converters, this device can be used for light-load synchronous rectification auxiliary paths or startup pre-charge circuits, helping to improve light-load efficiency and startup reliability of the converter.
7. Automotive Electronics Small-Signal Control: In automotive electronic systems, it is suitable for low-current control scenarios such as window control logic, sensor signal conditioning, and relay driver pre-stages, meeting the voltage withstand and stability requirements of the automotive environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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