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PMBF170,215-VB Product details

Product introduction:

PMBF170,215-VB is a small-sized, low-power N-Channel MOSFET in a SOT23-3 package, with a 60V voltage rating and 0.3A current capability. Enhanced by Trench technology, it offers excellent switching characteristics, suitable for small-signal control and level-shifting applications. The gate drive is flexible with a ±20V wide range, adapting to various logic level drives.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 1.7V 0.3A 3100(mΩ) 2800(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-N 60V 1.7V 0.3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-N 60V 1.7V 0.3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-N MOS

Voltage Rating: 60V
Drive Voltage: ±20V
Threshold Voltage: 1.7V
On-Resistance (10V Drive): 2800 mΩ
Maximum Current: 0.3A
Package: SOT23-3

Domain and module applications:


Portable Device Power Management → Small signal switching, low power consumption
Battery Protection Circuits → Precise cutoff, safe and reliable
Logic Level Shifting → Compatible with 3.3V/5V control
LED Indicator Drive → Low current, clear on/off
Relay/Load Drive → Weak signal controlling high-power on/off
Sensor Signal Acquisition → Impedance matching, low interference
DC-DC Auxiliary Power Supply → High-side switching, stable and efficient
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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