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IAUC70N08S5N074ATMA1-VB Product details
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Still troubled by high heat generation and high conduction loss in high-power power conversion? VBsemi IAUC70N08S5N074ATMA1-VB is here to solve your worries! This N-MOSFET in DFN8(5X6) package, using advanced SGT technology, combines 80V withstand voltage and 120A high current capability, with an on-resistance as low as 4.5mΩ (@10V), significantly reducing conduction loss and helping improve system efficiency. Whether in motor drives, battery protection, or DC-DC conversion, it can handle high-density power designs in a compact 5x6mm package, making it an ideal choice for engineers pursuing high power density and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 80V | 3V | 120A | 4.5(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 80V | 3V | 120A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 80V | 3V | 120A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | MOS |
Withstand Voltage: 80V (covers automotive and industrial mainstream voltage platforms, ample margin)
Drive Range: ±20V (compatible with various gate drive voltages, wide adaptability)
Threshold Voltage: 3V (standard logic level can be triggered stably)
Ultra-Low On-Resistance: 4.5mΩ @ 10V (strong current carrying capacity, extremely low heat generation)
High Current Capability: 120A (easily handles high-load surges)
Package: DFN8(5X6) (low thermal resistance, small size, conducive to high-density board layout)
Technology: SGT (Shielded Gate Trench, excellent balance between switching loss and conduction loss)
Domain and module applications：
– Multi-Scenario High-Efficiency Solutions, One-Stop
Motor Drives: Power tools, drones, robot ESCs, smooth and powerful power output
Battery Protection: Energy storage systems, power battery packs, fast fault current cutoff, ensuring safety
DC-DC Conversion: Synchronous rectification, buck-boost circuits, helping module miniaturization and high efficiency
Automotive Power: On-board chargers, DC-DC power supplies, vibration and temperature resistant, adapting to harsh environments
Server Power Supplies: High power density power modules, meeting continuous high-current output requirements
Industrial Control: PLCs, inverters, high-power switches, stable and reliable, long life
LED High-Power Lighting: Constant current drive and dimming control, low temperature rise, stable brightness
IAUC70N08S5N074ATMA1-VB – With SGT low-resistance technology, setting a new benchmark for high-power design!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
