中文
English
IAUC70N08S5N074-VB Product details
Back to previous pageProduct introduction：
Still troubled by heating and voltage drop in high-power switching applications? VBsemi IAUC70N08S5N074-VB is here to break the deadlock! This N-MOSFET in DFN8(5X6) package, using advanced SGT technology, can carry a huge current of 120A with a single tube, with an on-resistance as low as 4.5mΩ, low loss, and low temperature rise, easily handling harsh loads. The 80V withstand voltage rating covers industrial power supplies, motor drives, and automotive systems, making it the "hardcore heart" of high-performance power conversion.####
File download
Download PDF document
Download now
.png)
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 80V | 3V | 120A | 4.5(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 80V | 3V | 120A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 80V | 3V | 120A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | MOS |
- **Withstand Voltage**: 80V (ample margin, suitable for high-side and industrial bus)
- **Drive Range**: ±20V (compatible with 5V/10V/12V gate drives, flexible and reliable)
- **Threshold Voltage**: 3V (standard logic level, simpler drive design)
- **Ultra-Low On-Resistance**: 4.5mΩ @ 10V (extremely low conduction loss, significantly improved efficiency)
- **High Current Capability**: 120A (single tube high power, fewer parallel requirements)
- **Package**: DFN8(5X6) (low thermal resistance, high heat dissipation, suitable for high-density power layout)
- **Technology**: SGT (Shielded Gate Trench, fast switching speed, excellent FOM)
####
Domain and module applications：
– Six High-Power Scenarios, One Chip Solves All
- **Industrial Power Supplies**: Synchronous rectification in server/communication power supplies, improving conversion efficiency by over 2%
- **Motor Drives**: Power tools, drone ESCs, smooth high-current output without overheating
- **Automotive Electronics**: Car light control, DC-DC auxiliary power, vibration and high temperature resistant, stable and reliable
- **Battery Protection**: BMS charge/discharge circuit, instantaneous high-current cutoff, protecting battery cell safety
- **Electric Two-Wheelers**: Controller power stage, rapid acceleration, longer range
- **High-Power DC-DC**: Buck-boost topologies, achieving kilowatt-level power density in a small size
IAUC70N08S5N074-VB – High current, low loss, strong heat dissipation, making your power design effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
