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DMTH10H4M6SPSWQ-13-VB Product details
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The DMTH10H4M6SPSWQ-13-VB is a Single N-MOSFET deeply optimized for high-power switching applications. The SGT technology balances ultra-low on-resistance with excellent switching characteristics. The DFN8(5X6) package achieves an ideal balance between thermal dissipation and board space. The combination of 100V voltage rating, 105A current capability, and 5.6mΩ on-resistance makes it a preferred alternative to traditional TO-220 or DPAK packaged devices, especially suitable for high-power-density, high-reliability industrial and automotive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | 5.6(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | MOS |
VDS=100V: Suitable for 24V/48V/60V systems, providing ample margin for voltage spikes, effectively withstanding turn-off transients from inductive loads.
VGS=±20V: Compatible with 5V~12V logic levels, can be directly connected to MCU/drivers, simplifying gate drive circuit design.
Vth=3V (Typical): Moderate threshold voltage, strong noise immunity, while ensuring full enhancement with a 10V drive.
RDS(on)=5.6mΩ @ VGS=10V: Ultra-low on-resistance minimizes full-load conduction losses, significantly reducing temperature rise and heatsink size.
ID=105A: Ample continuous current capability to handle high-current surge scenarios like motor startup or power supply hot-swap.
Package DFN8(5X6): Low parasitic inductance, low thermal resistance, supports high-frequency hard switching, saves PCB area, suitable for compact power modules.
Technology SGT: Shielded gate trench structure, combines low on-resistance with low gate charge, optimizing switching losses and EMI performance.
Domain and module applications：
High-Power DC-DC Converters: In synchronous rectification or buck topologies, ultra-low on-resistance significantly improves heavy-load efficiency and reduces output ripple.
Motor Drive & Variable Frequency Control: 100V voltage rating and 105A high current fully cover industrial motors, power tools, and drone ESCs; low PWM switching losses, noticeably lower controller temperature rise.
Automotive Power Systems: Suitable for 12V/24V/48V automotive buses; wide safe operating area combined with low thermal resistance package, adapts to harsh environments like start-stop systems, DC-DC, BMS.
Telecom Power & Server Power Supplies: High power density DFN8(5X6) package suitable for rack power modules; 5.6mΩ on-resistance helps achieve 80Plus energy efficiency certification.
Battery Protection & Charging Equipment: Fast shutdown and low internal resistance ensure microsecond-level protection during overcurrent/short circuit, reducing protection board self-heating, extending battery life.
Power Tools & Garden Machinery: High current margin ensures no derating during heavy-load startup; SGT technology enhances durability and impact resistance.
Solar Inverters: Reliable operation in MPPT boost stages and inverter bridges; high voltage rating and low losses improve overall system conversion efficiency.
Selection Summary: The DMTH10H4M6SPSWQ-13-VB achieves an excellent balance between high current, high voltage rating, low on-resistance, and package thermal performance. It is a high-performance general-purpose choice for 100V power switching applications, particularly suitable for projects with strict requirements on efficiency, reliability, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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