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DMTH10H025LPS-13-VB Product details

Product introduction:

The DMTH10H025LPS-13-VB is a Single N-MOSFET deeply optimized for medium-voltage power switching applications. The SGT technology balances low conduction losses with excellent switching characteristics, and the DFN8(5X6) package achieves an ideal balance between thermal performance and board space. The combination of 100V voltage rating, 30A current capability, and 18mΩ on-resistance makes it a reliable upgrade option over traditional DPAK or SOP-8 packaged devices, especially suitable for high-power density, high-reliability applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 1.8V 30A 22(mΩ) 18(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 1.8V 30A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 1.8V 30A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N MOS

VDS=100V: Adapts to 24V/48V/60V systems, provides ample margin for voltage spikes, significantly reduces avalanche breakdown risk, and improves system robustness.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be directly driven by MCU/PMIC, eliminating the need for level-shifting circuits and simplifying drive design.
Vth=1.8V (Typical): Ensures sufficient turn-on even under low-voltage drive conditions, particularly suitable for applications with fluctuating battery voltages.
RDS(on)=18mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load temperature rise, can reduce the required copper area for heat dissipation, and improves system efficiency.
ID=30A: Ample continuous current margin, confidently handles common high peak load demands in industrial control, automotive electronics, and power supply systems.
Package DFN8(5X6): Low parasitic inductance, low thermal resistance, supports high-frequency switching, while saving PCB area, suitable for compact designs.

Domain and module applications:


DC-DC Converters: Replaces Schottky diodes in synchronous rectification applications, improving heavy-load efficiency by 2~3%, beneficial for module miniaturization and thermal management.
Automotive Auxiliary Power Supplies: The 100V voltage rating margin covers 12V/24V automotive bus transient spikes, and the wide operating temperature range ensures stable operation in harsh environments.
Motor Drive Control: Low on-resistance and low switching losses reduce PWM heating, resulting in smoother motor operation and significantly lower controller temperature rise.
Battery Protection Modules: Fast switching characteristics ensure microsecond-level shutdown during overcurrent/short circuits, low internal resistance reduces self-heating of the protection board, extending battery life.
Industrial Power Supplies and Chargers: High voltage rating and low on-resistance match wide input ranges, improving energy efficiency, meeting high-power density requirements for fast chargers and industrial adapters.
LED Lighting Drivers: Low on-state voltage drop reduces constant current source power dissipation, supports multi-channel parallel connection, improving overall luminaire efficacy and reliability.
Communication Base Station Power Supplies: SGT technology provides excellent switching performance, adapting to high-frequency hard-switching topologies, reducing system losses and cooling costs.

Selection Summary: The DMTH10H025LPS-13-VB achieves a balanced optimization between voltage rating, current capability, on-resistance, and package thermal performance. It is a high-performance general-purpose choice for 100V medium-voltage switching applications, particularly suitable for power supply and industrial control projects with strict requirements for efficiency, reliability, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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