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DMTH10H025LPDW-13-VB Product details
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Struggling with low efficiency and excessive heat in high-power conversion? Let the VBsemi DMTH10H025LPDW-13-VB solve your problems! This DFN8(5X6)-B packaged symmetrical dual N-Channel power MOSFET, using advanced Trench technology, can handle a continuous current of 30A per channel. With an on-resistance as low as 18mΩ at a 10V gate drive, it achieves extremely low conduction losses on a 100V high-voltage platform. The integrated dual-transistor design effectively saves PCB area, making it ideal for high-density power modules and multi-phase topologies – a true 'efficiency weapon' for power electronics engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 100V | 1.8V | 30A | 22(mΩ) | 18(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 100V | 1.8V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 100V | 1.8V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
- Voltage Rating: 100V (ample margin, suitable for 48V/60V/72V systems)
- Dual N+N Configuration: Two independent N-MOSFETs integrated in a DFN8(5X6)-B package, flexibly adaptable to half-bridge, synchronous rectification, and other structures
- Drive Range: ±20V (compatible with 5V/10V/12V drives, large gate voltage margin)
- Threshold Voltage: 1.8V (reliably triggered by low-voltage logic)
- Ultra-Low On-Resistance: 18mΩ @ VGS=10V; 22mΩ @ VGS=4.5V (even lower equivalent resistance when paralleling both channels)
- High Current Capability: 30A (per channel rated current, system can be paralleled for higher capacity)
- Package: DFN8(5X6)-B (bottom-side cooling pad, low thermal resistance, suitable for high-power surface mounting)
Domain and module applications：
– Six High-Frequency Scenarios, One Solution
- Synchronous Rectification DC-DC: 100V voltage rating combined with low on-resistance significantly improves conversion efficiency and reduces temperature rise
- Motor Drive: Power tools, drones, robot joint motors; fast PWM speed control response, low losses
- Battery Protection & BMS: High voltage rating accurately cuts off overcharge/overdischarge currents, safeguarding lithium battery packs
- Automotive Power: 48V mild hybrid systems, on-board chargers; vibration-resistant and stable over a wide temperature range
- Server Power Supplies: High-voltage bus to point-of-load conversion; dual N-channel MOSFET simplifies power stage design and saves board space
- Industrial Control: PLC output drivers, solenoid valve control; reliable, durable, and stable for long-term operation
DMTH10H025LPDW-13-VB – Dual integrated transistors, low-voltage drive, high-voltage high-current, making your power supply design more efficient and effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
