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DMPH6050SPDWQ-VB Product details
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DMPH6050SPDWQ-VB is a Dual-P+P MOSFET deeply optimized for low-voltage power switching applications. The Trench process balances low switching losses with high reliability, and the DFN8(5X6)-B package achieves an excellent balance between thermal performance and board area. The combination of -60V voltage rating, -11A current capability, and 60mΩ on-resistance makes it an ideal cost-reduction upgrade option to replace traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-current dual-channel applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-P+P | -60V | -1.6V | -11A | 75(mΩ) | 60(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-P+P | -60V | -1.6V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-P+P | -60V | -1.6V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-P+P | MOS |
VDS=-60V: Suitable for 12V/24V/36V systems, providing sufficient margin for negative voltage spikes, reducing avalanche breakdown risk, suitable for industrial and automotive bus scenarios.
VGS=±20V: Compatible with a wide range of logic level drives, can be directly driven by MCU/PMIC, supports positive and negative gate voltage control, facilitating half-bridge or push-pull circuit design.
Vth=-1.6V (Typical): Can enter the fully enhanced region even with low gate drive voltage, particularly suitable for battery voltage decay and low-voltage control signal scenarios.
RDS(on)=60mΩ @ VGS=10V: Maintains low on-resistance even with dual transistors integrated, controllable temperature rise under full load, can reduce heat dissipation copper area.
RDS(on)=75mΩ @ VGS=4.5V: Maintains good conduction characteristics under low gate drive voltage, suitable for direct drive by 3.3V/5V logic.
ID=-11A (Per Channel): Ample continuous current margin, dual transistors can be paralleled or used independently to handle peak current demands of most power management and motor drive loads.
Package DFN8(5X6)-B: Dual-chip integration, low parasitic parameters, supports high-frequency switching, significantly saves PCB area and reduces placement cost.
Domain and module applications：
Battery Protection Module: Dual P-MOS series or back-to-back configuration facilitates bidirectional charge/discharge protection, fast turn-off characteristics ensure microsecond-level response to overcurrent/short circuit.
Power Management Unit: Low internal resistance improves negative voltage buck-boost conversion efficiency, DFN8 small package suitable for compact designs of portable devices and module power supplies.
Motor Drive Circuit: P-MOS high-side drive eliminates the need for bootstrap circuits, dual channels can form H-bridge or half-bridge, low PWM switching losses, smoother motor operation.
Industrial Control Interfaces: -60V voltage margin suitable for 24V/36V industrial buses, load switches in input/output isolation circuits can simplify design.
Consumer Electronics Switches: Logic level direct drive simplifies peripherals, suitable for high-volume, low-cost products like smart locks, power tools, small appliances.
Automotive Auxiliary Power: Wide voltage range and dual-channel integration suitable for 12V/24V automotive systems, high reliability, can replace multiple single-tube solutions.
DC-DC Converters: Replaces Schottky diodes in synchronous rectification or point-of-load power supplies, improving heavy-load efficiency, facilitating further module miniaturization.
Selection Summary: DMPH6050SPDWQ-VB achieves a balance between dual P-MOS integration, on-resistance, package size, and system cost. It is a cost-effective general-purpose choice for -60V low-voltage dual-channel switching applications, particularly suitable for projects with strict requirements on space, power consumption, and device consistency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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