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DMPH6050SK3Q-13-VB Product details

Product introduction:

DMPH6050SK3Q-13-VB is a Single P-MOSFET deeply optimized for medium-power switching applications. The Trench process balances low on-resistance with high reliability, and the TO252 package provides a good compromise between heat dissipation and assembly convenience. The combination of -60V drain-source voltage, -35A continuous drain current, and 46mΩ on-resistance makes it a versatile power switch option for industrial control, automotive electronics, and power supply systems, especially suitable for applications with specific voltage and current margin requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -35A 58(mΩ) 46(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -35A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -35A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P MOS

VDS=-60V: Suitable for 12V/24V/48V systems, providing sufficient margin for negative voltage spikes, reducing avalanche breakdown risk, ideal for inductive load switching.
VGS=±20V: Compatible with 4.5V~12V logic levels, can be directly driven by controllers or driver ICs, simplifying gate drive design.
Vth=-1.7V (Typical): Can be turned on with low gate drive voltage, facilitating stable operation under battery voltage fluctuations.
RDS(on)=46mΩ @ VGS=10V; 58mΩ @ VGS=4.5V: Low on-resistance significantly reduces conduction losses under full load, potentially reducing heatsink or copper area requirements.
ID=-35A: Ample continuous current margin to handle peak current scenarios like motor startup and capacitive load inrush.
Package TO252: Low thermal resistance, high soldering reliability, suitable for medium-to-high power PCB layouts, compatible with mainstream SMT processes.

Domain and module applications:


Power Reverse Polarity Protection: P-MOS high-side drive achieves low-loss reverse polarity protection, with voltage drop far lower than Schottky diodes, improving system efficiency.
Battery Discharge Management: Low internal resistance reduces temperature rise in the discharge path; -60V voltage rating suits multi-cell Li-ion and lead-acid battery systems.
Motor Drive Control: Good PWM switching characteristics, effectively suppresses spikes when used with freewheeling diodes, ensuring smooth motor operation and controlled controller temperature rise.
Automotive Electronics Modules: Wide voltage margin suitable for 12V/24V automotive buses, meeting transient overvoltage conditions like load dump, high reliability.
DC-DC Converters: Used for load switches or synchronous rectification auxiliary paths, low on-resistance improves heavy-load efficiency, simplifies thermal design.
Industrial Control Interfaces: Suitable for PLC outputs, relay replacement, valve drive, and other medium-power switching applications, offering long life and no mechanical contacts.

Selection Summary: DMPH6050SK3Q-13-VB achieves a balance between voltage rating, current capability, on-resistance, and package heat dissipation. It is a cost-effective general-purpose choice for -60V class P-MOS power switches, particularly suitable for power supply and industrial applications with clear requirements for voltage margin, conduction loss, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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