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BSC070N10LS5ATMA1-VB Product details

Product introduction:

BSC070N10LS5ATMA1-VB is a Single N-MOSFET deeply optimized for high-power, high-efficiency switching applications. It utilizes advanced SGT (Split Gate Trench) technology, achieving an excellent balance between low conduction loss and fast switching capability. The DFN8(5X6) package offers good thermal paths and low parasitic inductance, making it suitable for high-density power modules and high-current applications. The combination of 100V withstand voltage, 105A current capability, and an ultra-low 5.6mΩ on-resistance makes it an ideal power device selection for fields such as server power supplies, telecom power supplies, motor drives, and energy storage systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 3V 105A 5.6(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 3V 105A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 3V 105A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N MOS

VDS=100V: Suitable for 12V/24V/48V/60V systems, providing ample margin for voltage spikes from inductive loads and power transients, significantly reducing avalanche breakdown risk.
VGS=±20V: Wide drive voltage window, compatible with 5V~12V logic levels, flexible matching with PWM controllers, gate driver ICs, or MCU outputs.
Vth=3V (Typical): Moderate threshold voltage provides strong noise immunity while ensuring full conduction with 10V drive, suitable for standard gate drive schemes.
RDS(on)=5.6mΩ @ VGS=10V: Ultra-low on-resistance minimizes full-load conduction losses, effectively reducing temperature rise and potentially reducing the number of paralleled devices, simplifying thermal design.
ID=105A: Ample continuous current capability to handle motor stall, power supply overload, and peak current demands of energy storage equipment.
Package DFN8(5X6): Small footprint with high current capability, low parasitic inductance supports high-frequency switching, and exposed bottom pad enhances heat dissipation, ideal for compact power modules.

Domain and module applications:


Synchronous Rectification DC-DC Converters: Ultra-low on-resistance significantly improves heavy-load efficiency, reducing losses by 2-3% compared to traditional MOSFETs, suitable for server and telecom power modules.
Motor Drive & Control: SGT technology provides low gate charge, minimizing PWM switching losses, suitable for high-frequency drive scenarios like power tools, robots, and drones.
Energy Storage & Battery Management Systems: 100V withstand voltage matches multi-cell lithium battery packs, low on-resistance reduces self-heating of protection boards, high current capability meets charge/discharge bypass switch requirements.
Automotive Power Systems: Suitable for 24V/48V vehicle buses, withstands harsh transient voltages, wide Safe Operating Area (SOA) ensures reliability during engine start-stop and load switching.
Power Inverters: Used in microinverters for photovoltaics, UPS, and motor inverter bridges, low conduction loss and good heat dissipation enhance overall power density.
Electric Two-Wheeler/Three-Wheeler Controllers: 105A high current margin covers peak demands during acceleration and hill climbing, DFN8 package facilitates controller miniaturization.
Industrial Power Supplies & Charging Piles: Synergistic effect of high withstand voltage and low on-resistance maintains high efficiency across a wide input voltage range, reducing heatsink cost and system volume.

Selection Summary: With its 100V withstand voltage, 5.6mΩ ultra-low on-resistance, 105A high current capability, and SGT process advantages, the BSC070N10LS5ATMA1-VB provides a high-performance, low-cost solution for high-power-density applications, particularly suitable for power conversion and motor control systems with strict requirements for efficiency, temperature rise, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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