BSC070N10LS5ATMA1-VB Product details
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | 5.6(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | MOS |
VDS=100V: Suitable for 12V/24V/48V/60V systems, providing ample margin for voltage spikes from inductive loads and power transients, significantly reducing avalanche breakdown risk.
VGS=±20V: Wide drive voltage window, compatible with 5V~12V logic levels, flexible matching with PWM controllers, gate driver ICs, or MCU outputs.
Vth=3V (Typical): Moderate threshold voltage provides strong noise immunity while ensuring full conduction with 10V drive, suitable for standard gate drive schemes.
RDS(on)=5.6mΩ @ VGS=10V: Ultra-low on-resistance minimizes full-load conduction losses, effectively reducing temperature rise and potentially reducing the number of paralleled devices, simplifying thermal design.
ID=105A: Ample continuous current capability to handle motor stall, power supply overload, and peak current demands of energy storage equipment.
Package DFN8(5X6): Small footprint with high current capability, low parasitic inductance supports high-frequency switching, and exposed bottom pad enhances heat dissipation, ideal for compact power modules.
Domain and module applications:
Synchronous Rectification DC-DC Converters: Ultra-low on-resistance significantly improves heavy-load efficiency, reducing losses by 2-3% compared to traditional MOSFETs, suitable for server and telecom power modules.
Motor Drive & Control: SGT technology provides low gate charge, minimizing PWM switching losses, suitable for high-frequency drive scenarios like power tools, robots, and drones.
Energy Storage & Battery Management Systems: 100V withstand voltage matches multi-cell lithium battery packs, low on-resistance reduces self-heating of protection boards, high current capability meets charge/discharge bypass switch requirements.
Automotive Power Systems: Suitable for 24V/48V vehicle buses, withstands harsh transient voltages, wide Safe Operating Area (SOA) ensures reliability during engine start-stop and load switching.
Power Inverters: Used in microinverters for photovoltaics, UPS, and motor inverter bridges, low conduction loss and good heat dissipation enhance overall power density.
Electric Two-Wheeler/Three-Wheeler Controllers: 105A high current margin covers peak demands during acceleration and hill climbing, DFN8 package facilitates controller miniaturization.
Industrial Power Supplies & Charging Piles: Synergistic effect of high withstand voltage and low on-resistance maintains high efficiency across a wide input voltage range, reducing heatsink cost and system volume.
Selection Summary: With its 100V withstand voltage, 5.6mΩ ultra-low on-resistance, 105A high current capability, and SGT process advantages, the BSC070N10LS5ATMA1-VB provides a high-performance, low-cost solution for high-power-density applications, particularly suitable for power conversion and motor control systems with strict requirements for efficiency, temperature rise, and reliability.
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