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BSZ15DC02KDHXTMA1-VB Product details
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VBsemi BSZ15DC02KDHXTMA1-VB is a dual-channel MOSFET manufactured using Trench technology, featuring a complementary N+P configuration designed for medium and low-voltage power conversion, load switching, and bridge drive applications. Its DFN8(3X3)-B small package offers excellent heat dissipation capability and a compact footprint, suitable for high-density PCB layouts. The device supports a ±30V drain-source voltage range, and its gate drive is compatible with common 3.3V/5V logic levels, facilitating direct system control. The integrated dual-channel design effectively simplifies circuit structure, improving power density and overall system reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+P | ±30V | 1.6/-1.7V | 8/-6A | 17/45(mΩ) | 13/40(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+P | ±30V | 1.6/-1.7V | 8/-6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+P | ±30V | 1.6/-1.7V | 8/-6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+P | MOS |
- Drain-Source Voltage (VDS): ±30V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): N-channel typical 1.6V; P-channel typical -1.7V
- On-Resistance (VGS=4.5V): N-channel 17mΩ (typical); P-channel 45mΩ (typical)
- On-Resistance (VGS=10V): N-channel 13mΩ (typical); P-channel 40mΩ (typical)
- Maximum Drain Current (ID): N-channel 8A; P-channel -6A
- Package: DFN8(3X3)-B
- Technology: Trench
Domain and module applications：
1. Half/Full Bridge Drives: Utilizes the integrated N+P complementary pair, suitable for small motor drives, audio amplification, and DC-AC inverter circuits, reducing the number of external components.
2. Synchronous Rectification Power Supplies: Used as high-side and low-side switches in Buck/Boost converters, low on-resistance reduces rectification losses and improves conversion efficiency.
3. Battery Protection and Management: Serves as the main switch for charge/discharge paths, working with protection ICs for fast overcurrent and overvoltage shutdown, meeting the needs of portable devices and energy storage systems.
4. Load Switching and Power Distribution: Used for intelligent power distribution, USB on/off control, and hot-swap control, enabling low-loss power path management.
5. DC-DC Converters: Adaptable to 3.3V/5V logic drive, suitable for auxiliary power supplies, POL modules, and miniaturized power supply designs.
6. LED Drive Circuits: Applied in low-voltage constant current drives or PWM dimming switches, improving current stability and suppressing flicker.
7. Industrial Sensors and Actuators: Drives relays, solenoid valves, and small pump loads, supporting high-frequency switching and reliable on/off control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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