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BSS308PEH6327-VB Product details

Product introduction:

The BSS308PEH6327-VB is a Single P-MOSFET deeply optimized for low-voltage power switching applications. The Trench process balances low switching losses with high reliability, and the SOT23-3 package balances heat dissipation with board space. The combination of 30V voltage tolerance, 5.6A current capability, and 46mΩ on-resistance makes it an ideal cost-effective drop-in replacement for traditional larger P-Channel devices, especially suitable for high-density, high-volume applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P -30V -1.7V -5.6A 54(mΩ) 46(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-P -30V -1.7V -5.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-P -30V -1.7V -5.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-P MOS

VDS=-30V: Suitable for negative power rails, load switches, and battery reverse polarity protection in 5V/12V/24V systems, providing ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be directly connected to MCU/PMIC, eliminating level-shifting circuits.
Vth=-1.7V (typical): Can enter the fully enhanced region even with low gate drive, particularly suitable for P-Channel load switches in scenarios with battery voltage decay.
RDS(on)=46mΩ @ VGS=10V (54mΩ @ VGS=4.5V): Low on-resistance significantly reduces temperature rise at full load, allowing for reduced copper area for heat dissipation, while also supporting low-voltage logic drive.
ID=-5.6A: Ample continuous current margin to handle peak demands of most portable and automotive auxiliary loads.
Package SOT23-3: Small size, low parasitic parameters, supports high-frequency switching, while saving PCB area and assembly costs.

Domain and module applications:


Portable Device Power Management: Low on-resistance improves boost/buck efficiency, extends battery life, small package enables ultra-thin designs.
Battery Protection Modules: P-Channel high-side switch characteristics facilitate overcurrent/short circuit protection, fast shutdown ensures microsecond-level response, low on-resistance reduces self-heating of the protection board.
Load Switches and Power Path Management: In negative voltage or high-side switch applications, low Vth tolerance supports direct control by 1.8V/2.5V logic, simplifying peripheral circuits.
Low-Voltage Motor Drives: Low PWM switching losses, smoother motor operation, significantly lower controller temperature rise.
Consumer Electronics Control Modules: Direct logic level drive simplifies peripheral circuits, suitable for high-volume, low-cost products like smart sockets and USB switches.
LED Lighting Drives: Low conduction voltage drop reduces constant current source power dissipation, supports multi-channel parallel connection, improves overall luminaire efficacy.
DC-DC Converters: Replaces Schottky diodes in synchronous rectification, improving heavy-load efficiency by 2-3%, facilitating module miniaturization.
Automotive Auxiliary Power Supplies: Voltage margin and wide operating temperature range are suitable for 12V automotive bus, offering high reliability.

Selection Summary: The BSS308PEH6327-VB achieves a balance between performance margin, package size, and system cost, making it a cost-effective general-purpose choice for 30V low-voltage P-Channel switching applications, especially suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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