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NTLUS3A18PZCTBG-VB Product details

Product introduction:

The NTLUS3A18PZCTBG-VB is a Single P-MOSFET deeply optimized for low-voltage power switch scenarios. The Trench process balances low conduction loss and high switching speed. The DFN6(2X2) package achieves an excellent balance between thermal performance and ultra-small footprint. The combination of 20V voltage rating, 10A current capability, and 20mΩ on-resistance makes it an ideal cost-reduction upgrade option to replace traditional SOP-8 packaged devices, especially suitable for high-density, portable, high-volume applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-P -20V -0.6V -10A 40(mΩ) 28(mΩ) 20(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-P -20V -0.6V -10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-P -20V -0.6V -10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-P MOS

VDS=-20V: Suitable for 5V/12V systems, providing ample voltage margin for load transients and parasitic inductance spikes, enhancing reliability.
VGS=±20V: Wide gate drive window, compatible with 1.8V~12V logic levels, can be directly connected to MCU/PMIC, reducing drive circuit design complexity.
Vth=-0.6V (typical): Very low threshold voltage, allowing full conduction even under low-voltage drive conditions, ideal for battery voltage decay or low-voltage rail applications.
RDS(on)=20mΩ @ VGS=10V: Ultra-low on-resistance, significantly reducing power consumption and temperature rise at full load, allowing reduction of heat sink copper area, improving system efficiency.
ID=-10A: Ample continuous current margin, capable of stably handling peak current demands of portable devices, battery tools, and automotive auxiliary loads.
Package DFN6(2X2): Ultra-small size, extremely low parasitic parameters, supporting high-frequency switching, while significantly saving PCB area, facilitating terminal product miniaturization.
Technology Trench: Optimized cell structure, reduced specific on-resistance, improved switching transients, balancing low loss and high reliability.

Domain and module applications:


Portable Device Power Management: Low on-resistance improves boost/buck conversion efficiency, extending battery life; small package aids slim design.
Battery Protection Module: Low conduction voltage drop on the negative side, combined with fast turn-off characteristics, ensures reliable protection during overcurrent/short circuit and reduces self-heating of the protection board.
Load Switch Circuit: Ultra-low threshold voltage supports direct drive by 1.8V logic, suitable for low-voltage power domain switching in mobile phones, wearables, etc.
Low-Voltage Motor Drive: Low PWM switching loss, smoother motor operation, significantly reduced controller temperature rise, suitable for fans, vibration motors, etc.
Consumer Electronics Control Module: Logic level direct drive simplifies peripheral circuits, suitable for smart sockets, USB switches, e-cigarettes, and other high-volume, low-cost products.
DC-DC Converter: Replaces traditional low-voltage P-MOS in synchronous rectification or load switches, improving heavy-load efficiency, facilitating module miniaturization.
Automotive Auxiliary Power: Voltage margin and wide operating temperature range adapt to 12V automotive bus, suitable for auxiliary loads like car light control and sensor power supply.

Selection Summary: The NTLUS3A18PZCTBG-VB achieves a balance between performance margin, package size, and system cost. It is a cost-effective general-purpose choice for 20V low-voltage P-MOS switching applications, particularly suitable for portable and high-density projects with strict space, power, and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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