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IPG20N10S4L35AATMA1-VB Product details
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**Are you looking for a low-side switch that can withstand 100V and continuously output 30A high current, while also offering dual-channel integration and a compact package to free up valuable space for high power density designs? VBsemi IPG20N10S4L35AATMA1-VB is designed for this - it ingeniously integrates dual N+N channels, 100V voltage rating, 18mΩ ultra-low on-resistance, and 30A current capability into a DFN8(5X6)-B flat package, making motor drive, power conversion, and battery protection designs simpler, more efficient, and more reliable.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 100V | 1.8V | 30A | 22(mΩ) | 18(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 100V | 1.8V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 100V | 1.8V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | MOS |
- Voltage Rating 100V, covering medium voltage applications with ample safety margin
- Gate Drive Range ±20V, compatible with 4.5V~10V logic drive
- Threshold Voltage 1.8V, low-voltage controllable, flexible drive design
- On-Resistance 18mΩ (at 10V drive) / 22mΩ (at 4.5V drive), extremely low losses
- Maximum Current 30A, dual N+N parallel structure, strong current capability
- Uses Trench technology, excellent switching performance, good thermal stability
- Package DFN8(5X6)-B, compact size, suitable for high-density PCB layout
**
Domain and module applications：
- **Motor Drive Modules** – Dual N+N configuration suitable for H-bridge or half-bridge topologies, low on-resistance reduces temperature rise, allowing power tools and drone ESCs to run longer.
- **DC-DC Converters** – Suitable for 48V~72V input step-down or step-up circuits, replacing Schottky diodes in synchronous rectification mode, significantly improving conversion efficiency.
- **Battery Protection Boards** – 100V voltage rating and 30A current capability meet overcurrent and short-circuit protection needs for lithium/lead-acid battery packs, fast response, protecting cell safety.
- **Power Management Units (PMU)** – Used as load switches or OR-ing circuits in server and communication equipment power supplies, low losses lead to lower temperature rise.
- **Electric Bicycle/Scooter Controllers** – Tolerates battery voltage fluctuations, provides stable high-current switching paths, improving overall vehicle reliability.
- **Industrial Control and Automation** – Suitable for solenoid valve, relay driver, and various inductive loads, built-in dual channels simplify PCB design.
In a nutshell: IPG20N10S4L35AATMA1-VB is not just an ordinary MOS tube; it is your 'dual-core efficiency expert' and 'space optimization master' for medium-voltage, high-current designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
