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DMN62D0UDWQ-13-VB Product details
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The VBsemi DMN62D0UDWQ-13-VB is a Dual-N+N field-effect transistor belonging to the VBsemi brand product series. This product features a dual N-channel design with high reliability and stable switching performance, suitable for various low-voltage, low-current control circuits. Manufactured using Trench technology, it has a drain-source voltage (VDS) of 60V and operates safely within a gate-source voltage (VGS) range of ±20V. The product is packaged in SC70-6, which is compact and flexible for layout, suitable for high-density integration and portable electronic device applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+N | 60V | 1.7V | 0.3A | 3200(mΩ) | 2500(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+N | MOS |
- Drain-Source Voltage (VDS): 60V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.7V
- On-Resistance (VGS=4.5V): 3200 mΩ
- On-Resistance (VGS=10V): 2500 mΩ
- Maximum Drain Current (ID): 0.3A
- Technology: Trench
Domain and module applications：
1. Portable Device Signal Switching: The DMN62D0UDWQ-13-VB is suitable for small signal switching circuits in portable electronic products, such as mobile phone peripheral interface switching, sensor signal path control, etc., with low power consumption and fast response.
2. Battery Protection and Management Modules: In battery management systems, this device can be used for switching control in charge/discharge detection and protection logic, ensuring the battery operates within a safe voltage and current range.
3. Logic Level Shifting Circuits: Due to its low threshold voltage and dual-channel configuration, this product is suitable for logic level shifting modules, achieving signal matching and isolation between different voltage domains.
4. Low-Power Load Driving: This model can be used to drive low-power loads such as LED indicators, micro relays, buzzers, etc., performing switching actions in embedded control systems.
5. Analog Switches and Sample-and-Hold Circuits: The dual N-channel structure is suitable for forming analog switches or sample-and-hold circuits for signal routing in audio, measurement, and data acquisition systems.
6. DC-DC Auxiliary Power Control: In auxiliary power supply or startup circuits of DC-DC converters, this device can act as a low-current switching transistor for auxiliary functions like under-voltage lockout, soft-start, and fault detection.
7. IoT and Smart Sensor Nodes: In IoT terminals and smart sensors, this product can be used for power gating or signal conditioning modules, helping to reduce standby power consumption and improve system integration.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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