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SQ2309ES-T1_BE3-VB Product details
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Are you designing a high-performance power switch or battery management circuit, but facing tight board-level space while needing to handle negative voltage rail switching? Ordinary P-channel MOS transistors either lack sufficient voltage rating or have high conduction losses. The VBsemi SQ2309ES-T1_BE3-VB is designed for this very purpose – it integrates a -60V voltage rating, -5.2A current capability, and an on-resistance of only 50mΩ into the compact SOT23-3 package, making high-reliability negative voltage power design more manageable.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -60V | -1.7V | -5.2A | 52(mΩ) | 50(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -60V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -60V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | MOS |
Voltage Rating -60V, covering a wide range of negative voltage application scenarios
Gate Drive Range ±20V, compatible with various logic level drives
Threshold Voltage -1.7V, reliably turned on by low-voltage control signals
On-Resistance 50mΩ (at 10V drive), effectively reducing conduction losses
Maximum Current -5.2A, small package can still handle considerable power
Trench Technology, combining excellent switching characteristics and conduction performance
Domain and module applications：
Load Switch / Power Path Management – Acts as the main switch for negative voltage rail on/off control, reducing voltage drop and power consumption, improving system efficiency.
Battery Protection Circuit – Quickly disconnects the circuit during overcurrent or short circuit conditions, protecting the battery cell and downstream circuits.
DC-DC Converter – Used in synchronous rectification or reverse protection topologies, reducing energy loss caused by diode voltage drop.
Industrial Sensors / Instrumentation – Withstands -60V voltage stress, providing a stable and reliable switching solution for negative power rails.
Portable Device Power Management – SOT23-3 package saves PCB area, suitable for high-density integration designs.
Motor Drive / Relay Control – Low on-resistance and fast switching characteristics enable efficient drive and low heat generation control.
In a nutshell: The SQ2309ES-T1_BE3-VB is not an ordinary P-channel MOS transistor; it is your "compact high-performance switching core" for negative voltage power and load management designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
