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SQ4917EY-T1_GE3-VB Product details
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Still troubled by power consumption and heat dissipation in high-side switching or load switching? The VBsemi SQ4917EY-T1_GE3-VB is here to help! This SOP8 packaged dual P-channel MOS transistor integrates two independent P-MOS transistors, occupying less board space and offering more flexible routing. With a withstand voltage of -60V and an ultra-low on-resistance of 54mΩ @10V, combined with Trench technology, it offers low switching losses and fast response. The -5.3A current capability is sufficient to cover most battery protection, power reverse polarity protection, and medium-to-low voltage load switch scenarios, making it a "dual-channel tool" for engineers to achieve high-reliability power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -60V | -1.7V | -5.3A | 60(mΩ) | 54(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -60V | -1.7V | -5.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -60V | -1.7V | -5.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | MOS |
- Voltage Rating: -60V (ample margin, suitable for 48V and below systems)
- Drive Range: ±20V (compatible with 5V/12V drive, strong adaptability)
- Turn-on Threshold: -1.7V (can be effectively turned on by low-level logic)
- Low On-Resistance: 54mΩ @10V; 60mΩ @4.5V (low loss, low heat generation)
- Drain Current: -5.3A (dual transistors can be paralleled to extend current capability)
- Configuration: Dual-P+P (two independent P-channels, flexibly adaptable for half-bridge or reverse polarity protection)
- Package: SOP8 (standard SMD package, suitable for automated production and high-density layout)
Domain and module applications：
– Six Typical Scenarios, Flexible Dual MOS Solution
- Battery Protection Board: Dual channels handle charge/discharge protection respectively, instantaneously cutting off fault currents, protecting cell safety
- Power Reverse Polarity Protection: P-MOS high-side switch design, low-loss replacement for diodes, reducing voltage drop
- Load Switch: Suitable for 12V/24V/48V systems, achieving efficient on/off switching and power management
- DC-DC Converter Auxiliary Circuit: Used for startup, soft-start, or bypass paths, improving overall efficiency
- Motor Drive: Forward/reverse control of small DC motors, dual P-MOS simplifies H-bridge peripheral design
- Industrial Control: For PLCs, sensor interfaces, and other occasions requiring high-reliability switching, impact resistant, wide temperature range
SQ4917EY-T1_GE3-VB – Two P-MOS in one package, bringing a more compact and efficient solution for your power supply and protection circuits!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
