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SQ4917CEY-T1_GE3-VB Product details
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The SQ4917CEY-T1_GE3-VB is a Dual P+P MOSFET deeply optimized for medium voltage power switching scenarios. The Trench technology balances low switching losses with high reliability. The SOP8 package achieves a good balance between heat dissipation performance and board area. The combination of 60V withstand voltage, -5.3A current capability, and 54mΩ on-resistance makes it an ideal choice to replace traditional DPAK or multiple discrete transistor parallel solutions, especially suitable for power and drive applications requiring high density and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -60V | -1.7V | -5.3A | 60(mΩ) | 54(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -60V | -1.7V | -5.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | -60V | -1.7V | -5.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-P+P | MOS |
VDS=-60V: Suitable for 12V/24V/48V systems, providing ample negative voltage spike margin, reducing avalanche breakdown risk, suitable for industrial and vehicle bus environments.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be directly connected to MCU/PMIC or driver ICs, simplifying gate drive circuit design.
Vth=-1.7V (typical): Can still enter the fully enhanced region under low-voltage drive, suitable for battery voltage fluctuation or low-voltage startup scenarios.
RDS(on)=54mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces temperature rise at full load, can reduce heat sink copper area, improving system power density.
ID=-5.3A: Ample continuous current capability to meet the peak demands of most medium-power loads. The dual P-channel configuration facilitates H-bridge or complementary output implementation.
Package SOP8: Dual transistor integration, compact size, low parasitic parameters, supports high-frequency switching, while saving PCB area and assembly cost.
Domain and module applications：
Motor Drive and H-Bridge Circuits: Convenient complementary pairing of dual P-channels, low PWM switching losses, smoother forward/reverse switching, significantly reduced controller temperature rise.
Load Switches and Power Management: Low internal resistance improves system efficiency, negative voltage turn-off characteristics are suitable for high-side switch applications, reducing self-heating, extending battery life.
Battery Protection Module: Fast response characteristics ensure microsecond-level shutdown during overcurrent/short circuit, dual transistor integration simplifies protection board layout, reduces internal resistance losses.
DC-DC Converters and Synchronous Rectification: Replaces multiple discrete P-MOS in negative voltage rails or inverting topologies, improves heavy-load efficiency, aids module miniaturization.
Vehicle Auxiliary Power: 60V voltage margin and wide operating temperature range are suitable for 12V/24V vehicle buses, reliably handling transient impacts like load dump.
Industrial Control Modules: Logic level direct drive simplifies peripheral circuits, suitable for high-volume, high-reliability applications like PLCs, sensor interfaces.
Selection Summary: The SQ4917CEY-T1_GE3-VB achieves an optimized balance between voltage margin, on-resistance, dual transistor integration, and package size. It is a cost-effective general-purpose choice for 60V medium-power negative voltage switching applications, particularly suitable for projects with strict requirements on space, heat dissipation, and device consistency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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