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SI7463DP-T1-GE3-VB Product details

Product introduction:

The SI7463DP-T1-GE3-VB is a Single P-MOS deeply optimized for low-voltage power switching applications. The Trench process balances low switching losses with high reliability. The DFN8(5X6) package achieves an excellent balance between heat dissipation capability and footprint. The combination of -40V voltage rating, -40A current capability, and 10mΩ on-resistance makes it an ideal cost-reduction, drop-in replacement for traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-P -40V -2V -40A 12(mΩ) 10(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-P -40V -2V -40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-P -40V -2V -40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-P MOS

VDS=-40V: Suitable for 12V/24V systems, providing ample margin for negative voltage spikes, reducing the risk of avalanche breakdown.
VGS=±20V: Compatible with wide gate drive voltages, can be directly connected to controllers/PWM drivers, simplifying peripheral circuit design.
Vth=-2V (typical): Flexible drive logic matching, suitable for low-voltage battery-powered and load switch applications.
RDS(on)=10mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load temperature rise, allowing for reduced copper area for heat dissipation.
RDS(on)=12mΩ @ VGS=4.5V: Maintains excellent conduction characteristics even at low gate drive voltages, compatible with 5V logic drives.
ID=-40A: Ample continuous current margin, capable of handling peak demands of most portable and automotive auxiliary loads.
Package DFN8(5X6): Low parasitic parameters, excellent thermal resistance, supports high-frequency switching, while saving PCB area and improving power density.

Domain and module applications:


Battery Protection Modules: Low internal resistance reduces self-heating of the protection board; fast switching characteristics ensure reliable shutdown during overcurrent/short circuit.
Load Switches and Power Path Management: Low voltage drop on the negative bus switch improves system efficiency, suitable for portable devices and industrial control.
Low-Voltage Motor Drives: Low PWM switching losses result in smoother motor operation and significantly lower controller temperature rise.
DC-DC Converters: Replaces Schottky diodes in synchronous rectification or reverse polarity protection, improving heavy-load efficiency and facilitating module miniaturization.
Automotive Auxiliary Power Supplies: Voltage rating margin and wide operating temperature range suit 12V/24V automotive buses, offering high reliability.
Consumer Electronics Control Modules: Logic-level direct drive simplifies peripherals, suitable for high-volume, low-cost products like smart sockets and USB switches.
LED Lighting Drivers: Low conduction voltage drop reduces constant current source power loss, supports multi-channel parallel connection, improving overall luminaire efficacy.

Selection Summary: The SI7463DP-T1-GE3-VB achieves a balance between high current capability, low on-resistance, and compact packaging. It is a cost-effective, general-purpose choice for -40V low-voltage P-channel switching applications, particularly suitable for projects with strict requirements on space, thermal dissipation, and system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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