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SIR5607DP-T1-RE3-VB Product details
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The SIR5607DP-T1-RE3-VB is a Single P-MOSFET optimized for low-voltage, high-current power switching applications. Its Trench technology balances ultra-low on-resistance with high switching reliability, and the DFN8(5X6) package achieves an excellent balance between thermal performance and board space. The combination of 60V withstand voltage, -80A current capability, and 6mΩ on-resistance makes it a preferred device for high-power-density power management, battery protection, and motor drive applications, especially suitable for compact systems requiring high current flow and efficient heat dissipation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-P | -60V | -3V | -80A | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-P | -60V | -3V | -80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-P | -60V | -3V | -80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-P | MOS |
VDS=-60V: Suitable for 12V/24V/48V systems, providing ample negative voltage spike margin, reducing avalanche breakdown risk.
VGS=±20V: Compatible with a wide range of gate drives, can be directly connected to controllers/drivers, simplifying peripheral circuit design.
Vth=-3V (typical): Moderate threshold voltage, quickly enters the fully conductive region with negative gate drive, effectively suppressing switching losses caused by the Miller plateau.
RDS(on)=6mΩ @ VGS=10V: Extremely low on-resistance, significantly reduces full-load conduction losses, lessening system thermal management pressure.
ID=-80A: Strong continuous current capability, can handle high-power loads and transient surges, providing ample margin.
Package DFN8(5X6): Low parasitic inductance and thermal resistance, supports high-frequency switching, saves PCB area, suitable for high-density mounting.
Domain and module applications：
High-Power DC-DC Converters: Ultra-low on-resistance improves synchronous rectification efficiency, especially suitable for negative voltage rails or battery reverse protection applications.
Battery Protection Modules: High current carrying capacity reduces temperature rise on the protection board, fast switching characteristics ensure reliable turn-off during abnormalities.
Motor Drive Control: Low PWM switching losses, suitable for high-power brushed/brushless motors, significantly reduces controller heat dissipation burden.
Automotive Power Distribution Units: 60V withstand voltage covers 12V/24V passenger and commercial vehicle buses, -80A current meets high-power load switching needs.
Power OR-ing / Reverse Polarity Protection Circuits: Extremely low conduction voltage drop reduces system power consumption, DFN8 package facilitates compact layout.
Industrial Equipment Power Switches: High-reliability Trench technology suitable for harsh environments, wide safe operating area enhances system robustness.
Energy Storage and Inverter Auxiliary Circuits: High current margin and low thermal resistance package, suitable for energy storage battery pack bypass and redundant switch design.
Selection Summary: The SIR5607DP-T1-RE3-VB achieves a balance between high current capability, low on-resistance, and package thermal performance. It is a cost-effective general-purpose choice for 60V P-MOS power switching applications, particularly suitable for projects with strict requirements on heat dissipation, efficiency, and space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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