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SIHA22N60E-GE3-VB Product details
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The SIHA22N60E-GE3-VB is a Single N-MOSFET optimized for high-voltage power switching applications. It utilizes SJ_Multi-EPI super junction technology, balancing low conduction losses with high switching speed. The TO220F fully insulated package achieves a good balance between heat dissipation capability and system safety. The combination of 600V withstand voltage, 20A current capability, and 150mΩ on-resistance makes it a reliable power option for server power supplies, industrial drives, and high-frequency high-voltage converters, especially suitable for applications with stringent requirements for voltage margin and thermal reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | 150(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | MOS |
VDS=600V: Suitable for three-phase rectification, PFC, and high-voltage DC-DC systems, providing ample voltage spike margin, significantly reducing avalanche breakdown risk.
VGS=±30V: Wide gate drive window, compatible with various PWM controllers and driver ICs, simplifying gate protection circuit design.
Vth=3.5V (typical): Moderate threshold voltage, strong anti-interference capability, suitable for industrial-grade drive environments, preventing false turn-on.
RDS(on)=150mΩ @ VGS=10V: Super junction technology achieves low on-resistance, resulting in lower full-load temperature rise under high voltage and high current, improving system efficiency.
ID=20A: Ample continuous current capability, covering the peak load requirements of most 600V-class switching power supplies and motor drives.
Package TO220F: Fully molded insulated design, no need for additional insulating pads, easy to install with reliable heat dissipation path, beneficial for mass production and maintenance.
Domain and module applications：
Switching Power Supply PFC Circuits: High-voltage super junction structure reduces conduction and switching losses, improving power factor correction stage efficiency.
Industrial Motor Drives: 600V withstand voltage combined with ample current margin adapts to wide voltage fluctuation conditions, significantly improving drive reliability.
Photovoltaic Inverters: Low on-resistance reduces power loss, high withstand voltage matches PV bus voltage, aiding system miniaturization.
Server and Telecom Power Supplies: Good high-frequency switching characteristics, combined with TO220F package for easy thermal design, meeting high power density requirements.
High-Voltage DC-DC Converters: Super junction technology improves hard switching losses, suitable for bus regulation, auxiliary power, and charging modules.
Charging Station Auxiliary Power Supplies: Wide VGS withstand voltage range enhances drive compatibility, high reliability for harsh industrial environments.
Welding Machines and Cutting Equipment: Strong robustness and high thermal stability, suitable for long-duration heavy-load impact conditions.
Selection Summary: The SIHA22N60E-GE3-VB achieves a balance between high voltage withstand, conduction loss, package reliability, and system cost. It is a cost-effective general-purpose choice for 600V-class high-voltage switching applications, particularly suitable for projects with strict requirements for voltage margin and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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