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SIHA22N60AE-GE3-VB Product details
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The SIHA22N60AE-GE3-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios, utilizing SJ_Multi-EPI (Superjunction Multi-Epitaxial) technology to achieve an excellent balance between on-resistance and switching losses. The TO220F fully molded package facilitates installation and heat dissipation while eliminating the need for an insulating pad. The combination of 600V withstand voltage, 20A current capability, and 150mΩ on-resistance makes it a reliable power device choice for high-voltage applications such as switching power supplies, industrial drives, and photovoltaic inverters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | 150(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | MOS |
- VDS=600V: Suitable for three-phase rectification, PFC, and high-voltage DC-DC systems, providing ample margin for voltage spikes and enhancing system avalanche capability.
- VGS=±30V: Wide gate drive range, compatible with various driver ICs and controller outputs, simplifying gate drive circuit design.
- Vth=3.5V (typical): Moderate threshold voltage, strong anti-interference capability, while ensuring safe and reliable switching behavior under high voltage.
- RDS(on)=150mΩ @ VGS=10V: Superjunction technology achieves low on-resistance, effectively reducing conduction losses and improving full-load temperature rise.
- ID=20A: Ample continuous current capability, suitable for steady-state and peak load demands in medium to high-power high-voltage switching scenarios.
- Package TO220F: Fully insulated package, easy to install, low thermal resistance, suitable for industrial applications requiring enhanced insulation or simplified assembly processes.
Domain and module applications：
- Switching Power Supplies (SMPS): Low on-resistance and high withstand voltage improve main switch efficiency, suitable for flyback, forward, and LLC topologies.
- PFC Power Factor Correction: 600V withstand voltage combined with fast switching capability meets the requirements of Boost circuits under high voltage stress.
- Industrial Motor Drives: Reliable operation under high-voltage bus supply, low losses reduce heatsink size, increasing inverter power density.
- Photovoltaic Inverters: Achieves efficient power conversion on the DC bus side; superjunction technology improves overall system power generation efficiency.
- High-Voltage DC-DC Converters: Suitable for communication power supplies, server power supplies, etc., replacing traditional planar MOSFETs to reduce losses.
- Battery Chargers and Adapters: Wide voltage margin adapts to wide input voltage ranges, improving the reliability of charging equipment under grid fluctuations.
- Electromagnetic Heating and Welding Equipment: Low high-frequency switching losses, withstands high-voltage surges, suitable for high-power induction heating and inverter welders.
Selection Summary: The SIHA22N60AE-GE3-VB achieves a balance between high withstand voltage, low on-resistance, package reliability, and process maturity. It is a cost-effective general-purpose choice for 600V high-voltage switching applications, particularly suitable for industrial and energy projects with strict requirements for efficiency, temperature rise, and insulation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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