中文
English
IXFQ28N60P3-VB Product details
Back to previous pageProduct introduction：
The IXFQ28N60P3-VB is a Single N-MOS optimized for high-voltage power switching scenarios, utilizing SJ_Multi-EPI superjunction technology to achieve an excellent balance between low on-resistance and low switching losses. The TO3P package offers excellent heat dissipation capability and creepage distance, suitable for high-power, high-reliability industrial applications. The combination of 650V withstand voltage, 47A current capability, and 50mΩ on-resistance makes it a high-performance preferred alternative to traditional planar MOSFETs in high-voltage power supplies, inverters, and new energy systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 650V | 3.5V | 47A | 50(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | MOS |
- VDS=650V: Suitable for the bus voltage after three-phase 380V input rectification and PFC boost topologies, providing ample margin for voltage spikes and enhancing system overvoltage capability.
- VGS=±30V: Wide gate drive voltage range, compatible with various driver outputs, simplifying protection circuit design and reducing the risk of false triggering.
- Vth=3.5V (typical): Moderate threshold voltage, strong anti-interference capability, suitable for stable switching control in high-voltage, high-power scenarios.
- RDS(on)=50mΩ @ VGS=10V: Ultra-low on-resistance, significantly reducing conduction losses, especially suitable for high-current continuous operation modes, reducing heatsink size.
- ID=47A: Strong continuous current capability, can handle high current conditions like motor startup and capacitive load surges, providing ample margin.
- Package TO3P: Fully molded isolation structure, low thermal resistance, easy installation with screw fixing to heatsinks, meeting industrial-grade long-term reliability requirements.
- Technology SJ_Multi-EPI (Superjunction Multi-Epitaxial): The charge balance structure significantly reduces on-resistance per unit area while maintaining fast switching characteristics, offering clear efficiency advantages.
Domain and module applications：
- High-Voltage Switching Power Supplies: Ultra-low conduction losses improve full-load efficiency; 650V withstand voltage covers mainstream industrial power topologies, reducing stress on the switch tube.
- PFC Power Factor Correction: Low Qg and low RDS(on) combined with high-frequency operation effectively suppress harmonics and increase power density.
- Photovoltaic Inverters: Withstands high-voltage bus in DC-AC conversion; low losses help achieve overall system efficiency above 98%, extending system lifespan.
- UPS Uninterruptible Power Supplies: High current margin and high withstand voltage suit battery boost and mains inverter modules, ensuring reliable power for critical loads.
- Motor Drive Control: Suitable for 380V-class variable frequency drives/servo drives; low PWM switching losses result in smoother motor operation and significantly lower controller temperature rise.
- Electric Vehicle Charging Stations: High-efficiency power stage in high-voltage DC-DC and LLC resonant circuits, reducing module size and increasing charging power.
- Industrial Welders/Cutting Power Supplies: In high-frequency hard-switching environments, the superjunction structure offers good avalanche capability, meeting the demands of harsh long-term operation.
Selection Summary: The IXFQ28N60P3-VB achieves an excellent balance between high withstand voltage, low on-resistance, high current capability, and package thermal performance. It is a cost-effective general-purpose choice for 650V high-voltage switching applications, particularly suitable for industrial and energy projects with strict requirements for efficiency, reliability, and thermal conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
