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FCH190N65F-VB Product details
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Are you designing a high-power-density server power supply or industrial inverter, needing to withstand a 650V high-voltage bus while minimizing switching and conduction losses? Ordinary high-voltage MOSFETs often have high on-resistance, leading to bulky heatsinks. The VBsemi FCH190N65F-VB is designed for this – it utilizes SJ_Multi-EPI superjunction technology, integrating 650V withstand voltage, 20A current capability, and a typical 160mΩ on-resistance in a TO247 package, allowing high-voltage, high-power designs to achieve an ideal balance between efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | MOS |
- Voltage Rating: 650V, easily handles the high-voltage bus after three-phase rectification or PFC boost.
- Gate Drive Range: ±30V, compatible with common PWM controllers and driver ICs.
- Threshold Voltage: 3.5V, clear switching characteristics, strong anti-interference capability.
- On-Resistance: 160mΩ (at 10V drive), maintaining low loss even at high voltage.
- Maximum Current: 20A, suitable for medium-power level switching power supplies and inverters.
- Technology: SJ_Multi-EPI, significantly reduces specific on-resistance and improves switching speed.
Domain and module applications：
- Server/Communication Power PFC Circuit – Used as a boost switch tube for high-efficiency power factor correction at 650V bus voltage.
- Industrial Inverters/Servo Drives – Used in inverter bridges, leveraging low on-resistance and strong surge withstand capability to improve overall system reliability.
- EV Charging Station AC-DC Module – Handles high-voltage switching tasks, reducing conduction and switching losses, and minimizing thermal stress.
- Photovoltaic Inverter DC-DC Boost Stage – Works with MPPT algorithms for stable and efficient conversion over a wide input voltage range.
- Uninterruptible Power Supplies (UPS) – Serves as the power switch for rectifier/inverter stages, ensuring power supply continuity and quality for critical loads.
- High-Voltage Auxiliary Power Supplies/Flyback Converters – Utilizes the 650V voltage margin and excellent thermal characteristics of the TO247 package to simplify circuit design.
In a nutshell: The FCH190N65F-VB is not just an ordinary high-voltage MOSFET; it is the "efficiency cornerstone" and "thermal management expert" for your high-voltage, high-power power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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