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SIZ342DT-T1-GE3-VB Product details
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The VBsemi SIZ342DT-T1-GE3-VB is a high-performance half-bridge dual N-channel field-effect transistor (Half-Bridge N+N) belonging to the VBsemi brand product series. This product utilizes advanced Trench technology, featuring extremely low on-resistance and excellent thermal stability, suitable for high power density, high-efficiency power conversion and control applications. The device is packaged in a compact DFN8(3X3)-C, achieving excellent current handling capability and thermal performance within a limited board area, meeting the dual requirements of miniaturization and high reliability in modern power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | 16(mΩ) | 9(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | MOS |
- Drain-Source Voltage (VDS): 30V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.7V
- On-Resistance (VGS=4.5V): 16mΩ
- On-Resistance (VGS=10V): 9mΩ
- Maximum Drain Current (ID): 35A
- Package: DFN8(3X3)-C
- Technology: Trench
Domain and module applications：
1. DC-DC Converters: The SIZ342DT-T1-GE3-VB is suitable for synchronous buck and boost circuits. Its integrated half-bridge structure combined with low on-resistance can significantly improve conversion efficiency and reduce solution size, commonly used in communication power supplies, server power supplies, and module power supplies.
2. Motor Drive Modules: This device is suitable for low-voltage motor drive applications such as power tools, cooling fans, and robot joints, enabling efficient control of motor start/stop, forward/reverse rotation, and speed regulation.
3. Battery Protection and Management: In lithium battery charge/discharge management systems, it can be used as a switch tube on the battery protection board, utilizing low on-resistance and 35A high current capability for low heat generation and high safety.
4. Power Distribution and Load Switches: Suitable for hot-swap circuits, intelligent power distribution switches, and USB PD power ports, enabling precise power path control and overcurrent protection.
5. Synchronous Rectification Circuits: Used as a synchronous rectifier in half-bridge or full-bridge LLC, active-clamp forward, and other topologies to reduce rectification losses and improve overall power supply efficiency.
6. Low-Voltage High-Current Power Switching: Suitable for various applications requiring high-current fast switching, such as power tool controllers and automotive auxiliary electronic systems, providing stable and reliable power switching performance.
7. Consumer Electronics Power Management: Can be used in smart home devices, fast chargers, LED driver power supplies, etc., to achieve efficient and compact power supply designs that meet strict energy efficiency standards.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
