HS8K11TB-VB Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | 16(mΩ) | 9(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | MOS |
Voltage: 30V
Drive Voltage: ±20V
Threshold Voltage: 1.7V
On-Resistance (4.5V drive): 16 mΩ
On-Resistance (10V drive): 9 mΩ
Maximum Current: 35A
Package: DFN8(3X3)-C
Configuration: Half-Bridge Dual N-Channel
Technology: Trench
Domain and module applications:
Synchronous Rectification DC-DC Modules → Dual MOSFETs integrated, small footprint, low losses
Motor Drives → Half-bridge direct drive, smooth speed regulation, fast response
Battery Charge/Discharge Protection → Reliable high current switching, safe and durable
Power Tools and Power Equipment → High current carrying, low heat generation, stable output
Power Inverters → High-efficiency conversion, improving system energy efficiency
Smart Home and Industrial Control → Clean switching, compatible with wide voltage drives
Automotive Auxiliary Power Supplies → Wide temperature reliability, surge immunity, adaptable to harsh environments
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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