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SIZ346DT-T1-GE3-VB Product details
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The VBsemi SIZ346DT-T1-GE3-VB is a Half-Bridge-N+N dual N-channel field-effect transistor belonging to the VBsemi product series. Manufactured using Trench technology, it features low on-resistance and high current handling capability, suitable for various high-efficiency power conversion and control applications. The device has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) range of ±20V, and is packaged in DFN8(3X3)-C, making it suitable for compact, high-density circuit designs, providing stable and reliable performance for power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | 16(mΩ) | 9(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | MOS |
- Configuration: Half-Bridge-N+N
- Drain-Source Voltage (VDS): 30V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 1.7V
- On-Resistance (VGS=4.5V): 16mΩ
- On-Resistance (VGS=10V): 9mΩ
- Maximum Drain Current (ID): 35A
- Technology: Trench
- Package: DFN8(3X3)-C
Domain and module applications：
1. DC-DC Converters: The half-bridge dual N-channel structure of the SIZ346DT-T1-GE3-VB is ideal for synchronous buck and boost converters, used as high-side and low-side switches for efficient, low-loss power conversion.
2. Power Management Modules: In power stage circuits of servers, communication equipment, and industrial power supplies, this device provides high current carrying capability and low on-resistance, helping to improve module power density and thermal performance.
3. Motor Drive Control: Suitable for low-voltage motor drive circuits, such as power tools, fans, and robot drive modules, for controlling motor start/stop, forward/reverse, and speed, ensuring smooth and efficient system operation.
4. Battery Protection and BMS: In Battery Management Systems (BMS), this device can serve as a charge/discharge control switch, supporting high current on/off, ensuring safe charging/discharging of lithium battery packs and extending battery life.
5. Load Switches and Power Distribution: Used in load switch circuits for portable devices and IoT terminals, enabling intelligent power distribution and on/off control, reducing system standby power consumption.
6. Synchronous Rectification Circuits: In the synchronous rectification stage of switching power supplies, this device's low on-resistance and fast switching characteristics significantly reduce rectification losses, improving overall power conversion efficiency.
7. Power Tools and Drones: In power systems requiring high transient current and compact packaging, the SIZ346DT-T1-GE3-VB can be used in modules like power tools and drone ESCs, providing strong drive capability and reliable heat dissipation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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