BSC070N10NS3GATMA1-VB Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | 5.6(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | MOS |
VDS=100V: Suitable for 24V/36V/48V/60V systems, providing ample margin for voltage spikes, significantly reducing the risk of avalanche breakdown, and enhancing system robustness.
VGS=±20V: Compatible with 5V~12V drive voltages, can be directly connected to mainstream gate driver ICs or PMICs, simplifying driver circuit design.
Vth=3V (typical): Moderate threshold voltage balances noise immunity with sufficient turn-on characteristics, suitable for stable operation under various conditions.
RDS(on)=5.6mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load losses and temperature rise, allowing for smaller heatsinks and improved power density.
ID=105A: Ample continuous current margin, capable of handling surge currents and inrush demands of high-power loads, suitable for high-reliability industrial-grade applications.
Package DFN8(5X6): Low parasitic inductance and thermal resistance, supports high-frequency switching, while optimizing PCB layout for high-current loop design.
Domain and module applications:
Server and Data Center Power Supplies: Ultra-low on-resistance improves synchronous rectification efficiency, reduces power stage temperature rise, meeting high-efficiency redundant power supply requirements.
Communication Base Station Power Supplies: 100V voltage rating suits 48V bus systems; SGT technology delivers excellent switching performance, reducing dead-time losses.
Industrial Motor Drives: 105A current capability covers medium-to-high power BLDC/PMSM drives; low PWM losses significantly improve controller heat generation.
Battery Energy Storage and Charge/Discharge Modules: High current and low internal resistance reduce system voltage drop; high voltage rating margin suits multi-cell lithium battery packs, enabling more reliable protection response.
DC-DC Converters: Replaces traditional MOSFETs in synchronous buck/boost topologies, improving heavy-load efficiency by 2~4%, facilitating module miniaturization and high power output.
Electric Vehicle Auxiliary Power Supplies: 100V voltage rating suits 12V/24V/48V automotive buses; wide safe operating area meets startup and surge load requirements.
Power OR-ing and Hot-Swap Circuits: Extremely low on-resistance reduces continuous conduction losses; high current density supports high-power path management.
Selection Summary: The BSC070N10NS3GATMA1-VB achieves an ultra-low on-resistance of 5.6mΩ and a high current capability of 105A in the 100V voltage class. Combined with SGT technology and the DFN8(5X6) low thermal resistance package, it is a preferred device for high-performance, high-density power conversion applications, especially suitable for industrial and communication-grade projects with strict requirements on efficiency, thermal management, and reliability.
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