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BSC070N10NS3GATMA1-VB Product details

Product introduction:

The BSC070N10NS3GATMA1-VB is a Single N-MOS deeply optimized for medium-to-high voltage power switching applications. Utilizing SGT (Split-Gate Trench) technology, it achieves an excellent balance between conduction loss and switching speed. The DFN8(5X6) package offers low thermal resistance and a compact footprint, suitable for high-density power system designs. The combination of 100V voltage rating, 105A current capability, and 5.6mΩ on-resistance makes it a key selection for efficient power stages in server power supplies, communication equipment, and industrial control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 3V 105A 5.6(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 3V 105A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 3V 105A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N MOS

VDS=100V: Suitable for 24V/36V/48V/60V systems, providing ample margin for voltage spikes, significantly reducing the risk of avalanche breakdown, and enhancing system robustness.
VGS=±20V: Compatible with 5V~12V drive voltages, can be directly connected to mainstream gate driver ICs or PMICs, simplifying driver circuit design.
Vth=3V (typical): Moderate threshold voltage balances noise immunity with sufficient turn-on characteristics, suitable for stable operation under various conditions.
RDS(on)=5.6mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load losses and temperature rise, allowing for smaller heatsinks and improved power density.
ID=105A: Ample continuous current margin, capable of handling surge currents and inrush demands of high-power loads, suitable for high-reliability industrial-grade applications.
Package DFN8(5X6): Low parasitic inductance and thermal resistance, supports high-frequency switching, while optimizing PCB layout for high-current loop design.

Domain and module applications:


Server and Data Center Power Supplies: Ultra-low on-resistance improves synchronous rectification efficiency, reduces power stage temperature rise, meeting high-efficiency redundant power supply requirements.
Communication Base Station Power Supplies: 100V voltage rating suits 48V bus systems; SGT technology delivers excellent switching performance, reducing dead-time losses.
Industrial Motor Drives: 105A current capability covers medium-to-high power BLDC/PMSM drives; low PWM losses significantly improve controller heat generation.
Battery Energy Storage and Charge/Discharge Modules: High current and low internal resistance reduce system voltage drop; high voltage rating margin suits multi-cell lithium battery packs, enabling more reliable protection response.
DC-DC Converters: Replaces traditional MOSFETs in synchronous buck/boost topologies, improving heavy-load efficiency by 2~4%, facilitating module miniaturization and high power output.
Electric Vehicle Auxiliary Power Supplies: 100V voltage rating suits 12V/24V/48V automotive buses; wide safe operating area meets startup and surge load requirements.
Power OR-ing and Hot-Swap Circuits: Extremely low on-resistance reduces continuous conduction losses; high current density supports high-power path management.

Selection Summary: The BSC070N10NS3GATMA1-VB achieves an ultra-low on-resistance of 5.6mΩ and a high current capability of 105A in the 100V voltage class. Combined with SGT technology and the DFN8(5X6) low thermal resistance package, it is a preferred device for high-performance, high-density power conversion applications, especially suitable for industrial and communication-grade projects with strict requirements on efficiency, thermal management, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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