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ISC060N10NM6ATMA1-VB Product details
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Are you designing a high-power-density DC-DC converter or motor drive module that needs to withstand a 100V bus voltage and handle tens of amperes of current surge? Ordinary MOS transistors either have high conduction losses or are too large and difficult to cool. The VBsemi ISC060N10NM6ATMA1-VB is designed for this purpose – it integrates 100V voltage withstand, 105A current carrying capability, and an on-resistance of only 5.6mΩ into a compact DFN8(5X6) package, while employing advanced SGT technology, allowing high-voltage, high-current designs without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | 5.6(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 100V | 3V | 105A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | MOS |
- Voltage withstand 100V, covering high-voltage scenarios like communication power supplies, energy storage, and industrial control
- Gate drive range ±20V, compatible with various drive circuits, strong overdrive immunity
- Threshold voltage 3V, gate drive design is more robust, effectively preventing false turn-on
- On-resistance 5.6mΩ (at 10V drive), maintaining extremely low losses even under high current
- Maximum current 105A, achieving ultra-high current density in a DFN8(5X6) package
- Uses SGT (Shielded Gate Trench) technology, offering superior switching characteristics and body diode reverse recovery performance
Domain and module applications：
- High-Power DC-DC Converters / Synchronous Rectification – As the main switch or rectifier, significantly reducing conduction losses, improving overall system efficiency, especially suitable for 48V input or 12V output power modules.
- Motor Drives / Power Tools – 100V voltage withstand and 105A current capability easily handle stall and surge conditions; low on-resistance reduces heat generation, extending continuous operation time.
- UPS Uninterruptible Power Supplies / Energy Storage Inverters – Used for battery charge/discharge switching and inverter bridge arms; SGT technology provides faster switching speeds and lower ringing, improving system reliability.
- Automotive Electronics / On-Board Power Management – Withstands 12V/24V system voltage fluctuations, providing stable power switching for on-board DC-DC converters, heaters, pump loads, etc.
- Lithium Battery Protection Boards / BMS – Charge/discharge protection for high-voltage cascaded or large-capacity battery packs; microsecond shutdown capability ensures fast circuit interruption during overcurrent or short circuit, safeguarding the battery.
- Server Power Supplies / Communication Power Supplies – Achieving efficient power conversion in 48V architectures; the small DFN8(5X6) package facilitates high-density board layout, with thermal pad design optimizing the heat path.
One-sentence summary: The ISC060N10NM6ATMA1-VB is a power MOS transistor combining high voltage, high current, low on-resistance, and advanced SGT technology; it is the "efficiency engine" and "power core" for your 100V-class power supply and drive designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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