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IPW65R110CFD7XKSA1-VB Product details
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Are you designing a high-power switching power supply or photovoltaic inverter with a bus voltage of 400V~600V, requiring low losses and high reliability? Ordinary high-voltage MOS transistors either have high on-resistance or high switching losses. The VBsemi IPW65R110CFD7XKSA1-VB is designed for this purpose – it integrates 650V voltage withstand, 20A current carrying capability, and an on-resistance of only 160mΩ into a robust TO247 package, allowing high-voltage, high-current designs to find the optimal balance between efficiency and temperature rise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | MOS |
Voltage withstand 650V, easily handling high-voltage bus fluctuations
Gate drive range ±30V, offering more flexible drive design and stronger noise immunity
Threshold voltage 3.5V, standard gate drive can turn it on stably
On-resistance 160mΩ (at 10V drive), significantly reducing on-state losses
Maximum current 20A, TO247 package with excellent heat dissipation, suitable for long-term full-load operation
Technology Highlight: SJ_Multi-EPI (Multi-Layer Epitaxial Super Junction) process, optimizing on-resistance and switching performance, performing robustly in hard-switching topologies
Domain and module applications：
Server/Communication Power Supplies – As the PFC boost switch, maintaining low losses under high input voltage, improving overall system efficiency.
Photovoltaic Inverters – Handling high-frequency switching in DC-DC boost or inverter bridge arms, reducing temperature rise, improving system reliability.
Electric Vehicle Charging Stations – Utilizing 650V voltage withstand and 20A current capability to stably handle high-voltage conversion in charging modules.
Industrial Motor Drives – TO247 package combined with low on-resistance to handle bus high voltage and continuous high current surges.
Uninterruptible Power Supplies (UPS) – As the main switch in rectifier/inverter units, ensuring power supply continuity for critical loads.
High-Voltage DC-DC Converters – Suitable for 300V~600V input voltage ranges, achieving efficient synchronous rectification or flyback control.
Energy Storage Systems (BMS/Energy Storage Converters) – Used for high-voltage side switching and power conversion in battery clusters, balancing safety and energy efficiency.
One-sentence summary: The IPW65R110CFD7XKSA1-VB is not an ordinary high-voltage MOS transistor; it is the "efficiency cornerstone" and "reliability choice" for your high-voltage, high-power power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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