NTHL082N65S3F-VB Product details
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 50(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | MOS |
VDS=650V: Suitable for bus voltage after three-phase grid rectification (approx. 540V~600V), providing ample margin for voltage spikes, significantly reducing avalanche breakdown risk.
VGS=±30V: Wide drive voltage window, compatible with standard gate driver ICs and transformer-isolated drives, enhancing system noise immunity.
Vth=3.5V (Typical): Moderate threshold voltage effectively prevents false turn-on, while ensuring full enhancement under 10V~15V gate drive.
RDS(on)=50mΩ @ VGS=10V: Ultra-low on-resistance, significantly reducing full-load conduction losses, improving system efficiency, and simplifying thermal design.
ID=47A: Ample continuous current capability, capable of handling industrial-grade load surge currents and long-term full-load operation.
Package TO247: Through-hole mounting, low thermal resistance, suitable for large heatsink assembly, supporting high power density designs.
Technology SJ_Multi-EPI: Super-junction structure optimizes the trade-off between on-resistance and voltage rating, resulting in low switching losses, suitable for high-frequency hard-switching topologies.
Domain and module applications:
Photovoltaic Inverters: Low conduction losses improve MPPT and inverter efficiency; high voltage margin ensures DC bus safety, enabling power density upgrades in string inverters.
Charging Stations / On-Board Chargers: Efficient DC-DC cascaded design reduces system temperature rise; 47A high current capability meets high-power charging module requirements.
Communication Power Supplies / Server Power Supplies: Replaces traditional planar MOSFETs in PFC and LLC circuits, improving heavy-load efficiency by 1~2%, facilitating power module miniaturization.
Industrial Motor Drives: 650V voltage rating matches three-phase 380V input; TO247 package suits high-power inverters; low switching losses enable smoother motor control.
UPS Uninterruptible Power Supplies: High surge capability and low on-resistance improve inverter stage reliability; wide safe operating area adapts to frequent switching conditions.
High-Voltage Battery Formation Equipment: Easy current scaling via multi-device paralleling; consistent super-junction process facilitates current sharing design.
Energy Storage Converters (PCS): Balances efficiency and heat dissipation in bidirectional Buck-Boost topologies, particularly suitable for high-voltage side power switches in large-capacity energy storage systems.
Selection Summary: The NTHL082N65S3F-VB achieves a good balance between high voltage rating, low on-resistance, high current handling capability, and thermal design. It is a cost-effective, versatile choice for 650V high-voltage switching applications, particularly suitable for projects with strict requirements for high power density, high reliability, and low system cost.
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