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NTHL082N65S3F-VB Product details

Product introduction:

The NTHL082N65S3F-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. It utilizes SJ_Multi-EPI super-junction technology, balancing low conduction losses with high switching speed. The TO247 package provides excellent heat dissipation capability and current handling capacity. The combination of 650V voltage rating, 47A continuous current, and 50mΩ on-resistance makes it an ideal choice for high-voltage, high-power applications like photovoltaic inverters, charging stations, and industrial power supplies, especially for systems with stringent efficiency and reliability requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 47A 50(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N MOS

VDS=650V: Suitable for bus voltage after three-phase grid rectification (approx. 540V~600V), providing ample margin for voltage spikes, significantly reducing avalanche breakdown risk.
VGS=±30V: Wide drive voltage window, compatible with standard gate driver ICs and transformer-isolated drives, enhancing system noise immunity.
Vth=3.5V (Typical): Moderate threshold voltage effectively prevents false turn-on, while ensuring full enhancement under 10V~15V gate drive.
RDS(on)=50mΩ @ VGS=10V: Ultra-low on-resistance, significantly reducing full-load conduction losses, improving system efficiency, and simplifying thermal design.
ID=47A: Ample continuous current capability, capable of handling industrial-grade load surge currents and long-term full-load operation.
Package TO247: Through-hole mounting, low thermal resistance, suitable for large heatsink assembly, supporting high power density designs.
Technology SJ_Multi-EPI: Super-junction structure optimizes the trade-off between on-resistance and voltage rating, resulting in low switching losses, suitable for high-frequency hard-switching topologies.

Domain and module applications:


Photovoltaic Inverters: Low conduction losses improve MPPT and inverter efficiency; high voltage margin ensures DC bus safety, enabling power density upgrades in string inverters.
Charging Stations / On-Board Chargers: Efficient DC-DC cascaded design reduces system temperature rise; 47A high current capability meets high-power charging module requirements.
Communication Power Supplies / Server Power Supplies: Replaces traditional planar MOSFETs in PFC and LLC circuits, improving heavy-load efficiency by 1~2%, facilitating power module miniaturization.
Industrial Motor Drives: 650V voltage rating matches three-phase 380V input; TO247 package suits high-power inverters; low switching losses enable smoother motor control.
UPS Uninterruptible Power Supplies: High surge capability and low on-resistance improve inverter stage reliability; wide safe operating area adapts to frequent switching conditions.
High-Voltage Battery Formation Equipment: Easy current scaling via multi-device paralleling; consistent super-junction process facilitates current sharing design.
Energy Storage Converters (PCS): Balances efficiency and heat dissipation in bidirectional Buck-Boost topologies, particularly suitable for high-voltage side power switches in large-capacity energy storage systems.

Selection Summary: The NTHL082N65S3F-VB achieves a good balance between high voltage rating, low on-resistance, high current handling capability, and thermal design. It is a cost-effective, versatile choice for 650V high-voltage switching applications, particularly suitable for projects with strict requirements for high power density, high reliability, and low system cost.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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