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IPW65R060CFD7XKSA1-VB Product details
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The IPW65R060CFD7XKSA1-VB is a Single N-MOSFET optimized for high-voltage power conversion scenarios, utilizing SJ_Multi-EPI super-junction technology to achieve an excellent balance between blocking voltage, on-resistance, and switching speed. The TO247 package offers superior heat dissipation capability and creepage distance, making it suitable for high power density, high-reliability industrial applications. The combination of 650V withstand voltage, 41A current carrying capacity, and 62mΩ on-resistance makes it an ideal main switch or high-efficiency rectifier in high-voltage topologies such as server power supplies, photovoltaic inverters, and charging stations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 41A | 62(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | MOS |
VDS=650V: Covers mainstream high-voltage architectures like three-phase rectification, PFC boost, and flyback/forward converters, providing ample voltage spike margin and significantly reducing avalanche breakdown risk.
VGS=±30V: Wide gate drive voltage window, compatible with common PWM controllers and driver ICs, strong gate overvoltage capability, simplifying drive circuit design.
Vth=3.5V (Typical): Moderate threshold voltage ensures immunity to Miller effect false turn-on while matching standard 10V~15V gate drive levels for full conduction.
RDS(on)=62mΩ @ VGS=10V: Super-junction technology yields extremely low on-resistance, significantly reducing conduction losses compared to traditional planar MOSFETs, improving full-load efficiency, and lowering heatsink costs.
ID=41A: Ample continuous current margin to handle transient overload scenarios like motor startup and capacitor charging, enhancing system robustness.
Package TO247: High through-hole mounting strength, large metal backplate for heat dissipation, low thermal resistance, suitable for long-term high-power operation; wide pin spacing meets high-voltage safety standards.
Domain and module applications：
Switching Power Supplies (SMPS): Excellent FOM (on-resistance × gate charge) reduces switching losses, suitable for high-efficiency topologies like LLC half-bridge and phase-shifted full-bridge, aiding Titanium-level efficiency designs.
Photovoltaic Inverters and Energy Storage Converters: High withstand voltage and low conduction voltage drop improve MPPT efficiency and inversion conversion efficiency, maintaining stable operation in high-temperature, high-humidity environments.
Electric Vehicle Charging Station Modules: Large operating margin under typical 650V bus voltage, 62mΩ on-resistance reduces rectification stage losses, supporting higher power density designs.
Industrial Motor Drives: Built-in fast recovery diode (CFD series) optimizes reverse recovery characteristics, effectively suppressing ringing when used with PWM speed control, reducing inverter bridge temperature rise.
UPS Uninterruptible Power Supplies: Both the PFC stage and inverter stage of online UPS benefit from low losses and high reliability, significantly extending backup time.
High-Performance AC-DC Adapters: Used in active clamp forward or resonant topologies, the TO247 package facilitates heat dissipation layout, meeting both efficiency and size requirements for the 100~300W power range.
Selection Summary: The IPW65R060CFD7XKSA1-VB achieves ultra-low on-resistance and ample current capability on a 650V high-voltage platform. Combined with the strong heat dissipation characteristics of the TO247 package, it is the preferred power switch for 500W~3kW level power conversion products. Its comprehensive performance targets industrial and new energy applications with strict requirements for efficiency, thermal reliability, and long-term lifespan. It can replace conventional 650V MOSFETs with fewer parallel devices, reducing total system cost and simplifying circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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