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NTP095N65S3H-VB Product details
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Still struggling with conduction losses and thermal dissipation challenges in high-voltage, high-power designs? Let VBsemi NTP095N65S3H-VB solve your problems! This TO220-packaged N-MOSFET, based on advanced super-junction multi-epitaxial technology, combines a 650V voltage rating with a 36A high current capability, featuring an ultra-low on-resistance of just 75mΩ, significantly reducing conduction losses. The SJ_Multi-EPI technology delivers faster switching speeds and a better Figure of Merit (FOM), taking the efficiency of high-voltage power supplies, inverters, and other applications to the next level. It is a "high-voltage weapon" for power electronics engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 3.5V | 36A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | MOS |
Voltage Rating: 650V (Ample margin for high-voltage applications, safe and reliable)
Gate Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard level drive, good compatibility)
Ultra-Low On-Resistance: 75mΩ @ 10V (Extremely low conduction losses, less heat generation)
High Current Capability: 36A (High power density in TO220 package)
Package: TO220 (Good heat dissipation, easy to install and PCB layout)
Technology: SJ_Multi-EPI (Super-junction multi-epitaxial, fast switching, low losses)
Domain and module applications：
– Six Popular Scenarios, one MOSFET handles them all
Switching Power Supplies: Efficient LLC or flyback topologies, improving overall efficiency and reliability
Uninterruptible Power Supplies (UPS): High-frequency inversion and rectification stages, stable output, strong overload capability
Photovoltaic Inverters: MPPT and DC-AC conversion, enabling efficient clean energy utilization
Motor Drives: Industrial variable frequency drives, compressor motors, smooth speed control, fast dynamic response
Charging Station Modules: High-voltage, high-power DC-DC, reducing temperature rise, extending system lifespan
High-Voltage Battery Management: Battery pack charge/discharge control, reliable disconnection, safeguarding system safety
NTP095N65S3H-VB – High voltage, low resistance, rock-solid stability, making your power supply design more confident!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
