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SiHG21N65EF-VB Product details
Back to previous pageProduct introduction：
The VBsemi SiHG21N65EF-VB is a Single N-Channel MOSFET belonging to the VBsemi product series. This product features a high breakdown voltage, low on-resistance, and excellent thermal stability, making it suitable for high-performance power conversion and power management applications. Manufactured using SJ_Multi-EPI (Superjunction Multi-Epitaxial) technology, it has a drain-source voltage (VDS) of 650V and operates reliably within a gate-source voltage (VGS) range of ±30V. The product is packaged in TO247, suitable for industrial-grade applications requiring high power dissipation and good thermal performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | MOS |
Drain-Source Voltage (VDS): 650V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 160mΩ
Maximum Drain Current (ID): 20A
Package Type: TO247
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial)
Domain and module applications：
1. Switching Power Supplies (SMPS): The SiHG21N65EF-VB is suitable for high-efficiency switching power supply circuits such as server power supplies, communication power supplies, and industrial power modules, leveraging its low on-resistance and high voltage rating to improve conversion efficiency.
2. Photovoltaic Inverters: In solar inverter systems, this device can be used in the DC-AC conversion stage, handling high bus voltages and achieving low-loss power switching, helping to improve overall system energy efficiency.
3. Electric Vehicle Charging Stations: This model is suitable for power conversion modules in EV charging stations, capable of handling high voltage and high current conditions, ensuring stable operation of the charging equipment.
4. Industrial Motor Drives: In industrial inverters and motor drive control modules, the SiHG21N65EF-VB can serve as a high-voltage switching device for motor start/stop, speed control, and energy regeneration control.
5. Uninterruptible Power Supplies (UPS): This device is suitable for rectifier and inverter circuits in UPS systems, providing reliable power switching capability to ensure continuous power supply to critical loads.
6. High Voltage DC-DC Converters: In high-voltage DC conversion applications, this product can be used as the main switch in boost, buck, or isolated converters, meeting the design requirements for high efficiency and miniaturization.
7. Power Factor Correction (PFC): In PFC circuits, the SiHG21N65EF-VB can be used as a boost switch, utilizing superjunction technology to achieve low conduction losses and high-frequency operation, improving power quality.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
